公开(公告)号：US20230155016A1

公开(公告)日：2023-05-18

申请号：US17455016

申请日：2021-11-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： RAMSEY HAZBUN ,  ANTHONY STAMPER ,  ZHONG-XIANG HE ,  PERNELL DONGMO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A transistor structure is provided, the structure may be for a high electron mobility transistor (HEMT). The HEMT comprises a channel layer arranged over a substrate, the channel layer may have a top surface. A barrier layer may be arranged over the channel layer. A first opening may be in the barrier layer and extend partially into the channel layer. A first barrier liner may be arranged in the first opening and over the channel layer, the first barrier liner may have a bottom surface. The bottom surface of the first barrier liner may be lower than the top surface of the channel layer.