公开(公告)号：US20240405019A1

公开(公告)日：2024-12-05

申请号：US18327107

申请日：2023-06-01

Applicant: GlobalFoundries U.S. Inc.

Inventor： Marvin G.L. Montaque ,  Cathryn J. Christiansen ,  Craig B. Beucler ,  Timothy W. Kemerer

IPC: H01L27/06 ,  H01L21/8249

Abstract: A structure includes a first gate structure spaced from a second gate structure in a field effect transistor (FET) area of a substrate. A polysilicon resistor is in a space between the first gate structure and the second gate structure. The polysilicon resistor has a lower surface that is farther from the substrate than lower surfaces of the polysilicon bodies of the first and second gate structures. The polysilicon resistor may have a different polarity dopant compared to at least one of the polysilicon bodies of the first and second gate structures.