公开(公告)号：US20230083044A1

公开(公告)日：2023-03-16

申请号：US17457325

申请日：2021-12-02

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. Derrickson ,  John L. Lemon ,  Haiting Wang ,  Judson R. Holt

IPC: H01L29/735 ,  H01L29/10 ,  H01L29/66

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.

公开(公告)号：US11888050B2

公开(公告)日：2024-01-30

申请号：US17457325

申请日：2021-12-02

Applicant: GlobalFoundries U.S. Inc.

Inventor： John L. Lemon ,  Alexander M. Derrickson ,  Haiting Wang ,  Judson R. Holt

IPC: H01L29/73 ,  H01L29/735 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L29/735 ,  H01L29/1008 ,  H01L29/6625

Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.