公开(公告)号：US20240006309A1

公开(公告)日：2024-01-04

申请号：US17809610

申请日：2022-06-29

Applicant: GlobalFoundries U.S. Inc.

Inventor： Michael J. Hauser ,  Michael J. Zierak

IPC: H01L23/525 ,  H01L23/62 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5256 ,  H01L23/62 ,  H01L23/5226 ,  H01L23/528

Abstract: An integrated circuit (IC) structure includes a transistor in a device layer over a substrate, the transistor including a gate; and a plurality of interconnect layers over the device layer, the plurality of interconnect layers including a last metal layer. A process-induced damage (PID) protection structure includes a conductor coupling the gate to a well in the substrate but includes an open fuse element therein. A first metal interconnect extends from a first terminal of the open fuse element to a first pad in the last metal layer, and a second metal interconnect extending from a second terminal of the open fuse element to a second pad in the last metal layer. The fuse element is closed during fabrication, and the metal interconnects allow opening of the fuse element to deactivate the PID protection structure after fabrication.