公开(公告)号：US20240162146A1

公开(公告)日：2024-05-16

申请号：US17984724

申请日：2022-11-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh M. PANDEY ,  Rajendran KRISHNASAMY ,  Vibhor JAIN

IPC: H01L23/525

CPC classification number: H01L23/5256

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to an e-fuse with metal fill structures and methods of manufacture. The structure includes: an insulator material; an e-fuse structure on the insulator material; a plurality of heaters on the insulator material and positioned on sides of the e-fuse structure; and conductive fill material within a space between the e-fuse structure and the plurality of heaters.

公开(公告)号：US20240162345A1

公开(公告)日：2024-05-16

申请号：US17984736

申请日：2022-11-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh M. PANDEY ,  Rajendran KRISHNASAMY ,  Judson R. HOLT ,  Chung Foong TAN

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7823 ,  H01L21/76224 ,  H01L29/401 ,  H01L29/407 ,  H01L29/66681

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a transistor with a metal field plate contact and methods of manufacture. The structure includes: a gate structure on a semiconductor substrate; a shallow trench isolation structure within the semiconductor substrate; and a contact extending from the gate structure and into the shallow trench isolation structure.