公开(公告)号：US20240125004A1

公开(公告)日：2024-04-18

申请号：US18046319

申请日：2022-10-13

申请人： GlobalWafers Co., Ltd.

发明人： Chieh HU ,  Hsien-Ta TSENG ,  Chun-Sheng WU ,  William Lynn LUTER ,  Liang-Chin CHEN ,  Sumeet BHAGAVAT ,  Carissima Marie HUDSON ,  Yu-Chiao Wu

IPC分类号： C30B15/04 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

公开(公告)号：US20240125003A1

公开(公告)日：2024-04-18

申请号：US18046314

申请日：2022-10-13

申请人： GlobalWafers Co., Ltd.

发明人： Chieh HU ,  Hsien-Ta TSENG ,  Chun-Sheng WU ,  William Lynn LUTER ,  Liang-Chin CHEN ,  Sumeet BHAGAVAT ,  Carissima Marie HUDSON ,  Yu-Chiao Wu

IPC分类号： C30B15/04 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B15/04 ,  C30B15/14 ,  C30B29/06

摘要： A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.