公开(公告)号：US11139400B2

公开(公告)日：2021-10-05

申请号：US16785975

申请日：2020-02-10

Applicant: Google LLC

Inventor： Seiyon Kim ,  Rafael Rios ,  Fahmida Ferdousi ,  Kelin J. Kuhn

IPC: H01L29/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L29/16 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/10 ,  H01L29/786

Abstract: Non-planar semiconductor devices having hybrid geometry-based active regions are described. For example, a semiconductor device includes a hybrid channel region including a nanowire portion disposed above an omega-FET portion disposed above a fin-FET portion. A gate stack is disposed on exposed surfaces of the hybrid channel region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the hybrid channel region.