公开(公告)号：US09130028B2

公开(公告)日：2015-09-08

申请号：US14240599

申请日：2012-08-23

申请人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

发明人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/423 ,  H01L27/06 ,  H01L29/15 ,  H01L29/20 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L29/151 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/7831

摘要： A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.

摘要翻译： 一种正常关闭场效应晶体管（FET），包括：多个邻接的氮化物半导体层，其在相邻层之间具有不同的组成和异质结界面，费米能级和传导和价态能带; 源极和漏极覆盖多个氮化物层的顶部氮化物层，并且具有分别包括源极和漏极附近的至少两个异质结的区域的源极和漏极访问区域; 源极和漏极之间的第一个栅极; 其中当栅极和公共接地电压之间没有电位差时，二维电子气体（2DEG）在源极和漏极访问区域中的每一个中的多个异质结处在存取区域中存在，并且基本上没有2DEG 存在在第一栅极下的异质结的任何区域附近。

公开(公告)号：US08816395B2

公开(公告)日：2014-08-26

申请号：US13215254

申请日：2011-08-23

申请人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

发明人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L29/151 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/7831

摘要： A normally OFF field effect transistor (FET) having a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces, wherein when there is no potential difference between a first gate and a common ground voltage, a two dimensional electron gas (2DEG) is present at a plurality of heterojunctions in each of a source access region and a drain access region, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.

摘要翻译： 具有多个具有不同组成和异质结界面的相邻氮化物半导体层的正常OFF场效应晶体管（FET），其中当第一栅极和公共接地电压之间没有电位差时，二维电子气（2DEG） 存在于源极访问区域和漏极访问区域中的每一个中的多个异质结处，并且在第一栅极下方的异质结的任何区域基本上不存在2DEG。

公开(公告)号：US20140326951A1

公开(公告)日：2014-11-06

申请号：US14240599

申请日：2012-08-23

申请人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

发明人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

IPC分类号： H01L29/778 ,  H01L29/15

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L29/151 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/7831

摘要： A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.

摘要翻译： 一种正常关闭场效应晶体管（FET），包括：多个邻接的氮化物半导体层，其在相邻层之间具有不同的组成和异质结界面，费米能级和传导和价态能带; 源极和漏极覆盖多个氮化物层的顶部氮化物层，并且具有分别包括源极和漏极附近的至少两个异质结的区域的源极和漏极访问区域; 源极和漏极之间的第一个栅极; 其中当栅极和公共接地电压之间没有电位差时，二维电子气体（2DEG）在源极和漏极访问区域中的每一个中的多个异质结处在存取区域中存在，并且基本上没有2DEG 存在在第一栅极下的异质结的任何区域附近。

公开(公告)号：US20110297961A1

公开(公告)日：2011-12-08

申请号：US13215254

申请日：2011-08-23

申请人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

发明人： Gregory Bunin ,  Tamara Baksht ,  David Rozman

IPC分类号： H01L29/205 ,  B82Y99/00

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L29/151 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/7787 ,  H01L29/7831

摘要： A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.

摘要翻译： 一种正常关闭场效应晶体管（FET），包括：多个邻接的氮化物半导体层，其在相邻层之间具有不同的组成和异质结界面，费米能级和传导和价态能带; 源极和漏极覆盖多个氮化物层的顶部氮化物层，并且具有分别包括源极和漏极附近的至少两个异质结的区域的源极和漏极访问区域; 源极和漏极之间的第一个栅极; 其中当栅极和公共接地电压之间没有电位差时，二维电子气体（2DEG）在源极和漏极访问区域中的每一个中的多个异质结处在存取区域中存在，并且基本上没有2DEG 存在在第一栅极下的异质结的任何区域附近。