Low Bias Drift Modulator With Buffer Layer
    1.
    发明申请
    Low Bias Drift Modulator With Buffer Layer 有权
    具有缓冲层的低偏移调制器

    公开(公告)号:US20070116475A1

    公开(公告)日:2007-05-24

    申请号:US11625535

    申请日:2007-01-22

    IPC分类号: H04B10/00

    摘要: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses

    摘要翻译: 本发明涉及一种电光调制器结构,其包含埋在该装置内的附加一组偏置电极,用于施加偏压以设定工作点。 因此,用于调制输入光信号的RF电极可以以零直流偏压工作,减少电极腐蚀以及可能存在于非密封封装中的电流和其他影响。 掩埋偏置电极在控制电荷积聚方面也是有利的,随之而来的是漂移特性的改善。 偏置电极材料可用于布置装置内的偏置信号,特别是外部端子,以及形成封装层,以允许在非密封环境中操作,从而降低制造成本。 提出了使用X切割和Z切割的铌酸锂(LiNbO 3 3)的实施例。 对于后者,偏置电极可以沿其轴线分开以避免光损耗

    Low bias drift modulator with buffer layer
    2.
    发明申请
    Low bias drift modulator with buffer layer 有权
    具有缓冲层的低偏置漂移调制器

    公开(公告)号:US20060023288A1

    公开(公告)日:2006-02-02

    申请号:US11189449

    申请日:2005-07-26

    IPC分类号: G02F1/03

    摘要: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses

    摘要翻译: 本发明涉及一种电光调制器结构,其包含埋在该装置内的附加一组偏置电极,用于施加偏压以设定工作点。 因此,用于调制输入光信号的RF电极可以以零直流偏压工作,减少电极腐蚀以及可能存在于非密封封装中的电流和其他影响。 掩埋偏置电极在控制电荷积聚方面也是有利的,随之而来的是漂移特性的改善。 偏置电极材料可用于布置装置内的偏置信号,特别是外部端子,以及形成封装层,以允许在非密封环境中操作,从而降低制造成本。 提出了使用X切割和Z切割的铌酸锂(LiNbO 3 3)的实施例。 对于后者,偏置电极可以沿其轴线分开以避免光损耗

    Low bias drift modulator with buffer layer
    3.
    发明授权
    Low bias drift modulator with buffer layer 有权
    具有缓冲层的低偏置漂移调制器

    公开(公告)号:US07343055B2

    公开(公告)日:2008-03-11

    申请号:US11625535

    申请日:2007-01-22

    IPC分类号: G02F1/035 G02F1/03

    摘要: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

    摘要翻译: 本发明涉及一种电光调制器结构,其包含埋在该装置内的附加一组偏置电极,用于施加偏压以设定工作点。 因此,用于调制输入光信号的RF电极可以以零直流偏压工作,减少电极腐蚀以及可能存在于非密封封装中的电流和其他影响。 掩埋偏置电极在控制电荷积聚方面也是有利的,随之而来的是漂移特性的改善。 偏置电极材料可用于布置装置内的偏置信号,特别是外部端子,以及形成封装层,以允许在非密封环境中操作,从而降低制造成本。 提出了使用X切割和Z切割的铌酸锂(LiNbO 3 3)的实施例。 对于后者,偏置电极可以沿其轴线分开以避免光损耗。

    Low bias drift modulator with buffer layer

    公开(公告)号:US07324257B2

    公开(公告)日:2008-01-29

    申请号:US11189449

    申请日:2005-07-26

    IPC分类号: G02F1/03 G02F1/035 G02F1/29

    摘要: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.