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公开(公告)号：US20190162984A1
公开(公告)日：2019-05-30
申请号：US16174644
申请日：2018-10-30
发明人： Masaki Sugiyama , Shinji Maruyama
IPC分类号： G02F1/01
CPC分类号： G02F1/011 , G02F1/0121 , G02F1/0356 , G02F1/2255
摘要： An optical modulator includes: an optical modulator chip having an optical waveguide having a bent waveguide portion that is bent between a light input end portion and a light output end portion, a bias electrode provided between the light input end portion and the bent waveguide portion along the optical waveguide, and a signal electrode provided between the bent waveguide portion and the light output end portion along the optical waveguide; a bias input terminal configured to input a bias voltage, the bias input terminal being electrically connected to the bias electrode, and a signal input terminal configured to input an electric signal, the signal input terminal being provided closer to a receiver configured to receive an electric signal than the bias input terminal and being electrically connected to the signal electrode.
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2.发明申请公开(公告)号：US20180321570A1
公开(公告)日：2018-11-08
申请号：US16063288
申请日：2016-12-07
发明人： MIAOFENG LI , XI XIAO , LEI WANG
CPC分类号： G02F1/2255 , G02F1/0121 , G02F1/015 , G02F1/03 , G02F1/0356
摘要： An integrated electro-optic modulator and a method of improving 3 dB bandwidth thereof by substrate hollowing. The method comprises the steps of: calculating an electric field intensity distribution area on the cross section of a modulation area of the integrated electro-optic modulator (101); taking an overlapping part of the electric field intensity distribution area and a substrate material (10) as a hollowing out area (80) (102); determining a size and positions of hollowing out windows (60) needing to be opened in a buried layer of silicon dioxide (20) over the hollowing out area (80) beside both sides of electrodes (50), and etching out the hollowing out windows (60) (103); and performing a hollowing operation on the hollowing out area (80) via the hollowing out windows (60) (104).
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公开(公告)号：US20180252948A1
公开(公告)日：2018-09-06
申请号：US15973100
申请日：2018-05-07
发明人： Gregory J. MCBRIEN , Karl KISSA
CPC分类号： G02F1/0102 , G02F1/0316 , G02F1/0356 , G02F1/2255
摘要： A modulator may include a substrate. The modulator may include one or more waveguides formed upon or formed in the substrate. A signal electrode may be provided adjacent to at least one of the one or more waveguides and may include a curved outer surface. The modulator may include one or more ground electrodes provided adjacent to the signal electrode. Each ground electrode, of the one or more ground electrodes, may include a respective curved inner surface that is radially spaced from the curved outer surface of the signal electrode. The one or more ground electrodes and the substrate may at least substantially enclose the curved outer surface of the signal electrode.
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公开(公告)号：US09983550B2
公开(公告)日：2018-05-29
申请号：US15127197
申请日：2015-03-18
申请人： Oewaves, Inc.
发明人： Wei Liang , Andrey B. Matsko , Lute Maleki , Danny Eliyahu , Vladimir S. Ilchenko , Anatoliy A. Savchenkov
CPC分类号： G04F5/14 , G02F1/0356
摘要： An optical atomic clock utilizing two different laser light sources is described. A source laser is locked to a first optical resonator, which supports a whispering gallery mode for the source laser and generates optical hyperparametric sidebands from the source laser output by multi-wave mixing. A reference laser is locked to an atomic reference via a second optical resonator, and the first optical resonator is locked to the reference laser. Optical parametric sidebands, which are locked to an atomic reference but are generated from a wavelength unrelated to the clock transition of the atomic reference, are coupled out of the first optical resonator to generate an RF signal useful in atomic timekeeping.
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公开(公告)号：US20180143464A1
公开(公告)日：2018-05-24
申请号：US15876856
申请日：2018-01-22
发明人： Thomas Baehr-Jones , Yang Liu
CPC分类号： G02F1/025 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/035 , G02F1/0353 , G02F1/0356 , G02F1/2257 , G02F2001/0113 , G02F2001/0152
摘要： A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
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公开(公告)号：US09977270B2
公开(公告)日：2018-05-22
申请号：US15515098
申请日：2015-09-30
CPC分类号： G02F1/0316 , G02F1/01 , G02F1/035 , G02F1/0356 , G02F1/065 , G02F1/313 , G02F2201/46 , G02F2202/20
摘要： An optical device is provided, which includes: an optical waveguide provided in a substrate having an electro-optic effect; a signal electrode provided on the substrate and above the optical waveguide; and a peeling prevention film which is provided on at least a part of an outer peripheral portion of the substrate and at a position spaced apart from the signal electrode, and also serves as a ground electrode.
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公开(公告)号：US09910302B2
公开(公告)日：2018-03-06
申请号：US15481669
申请日：2017-04-07
发明人： Thomas Baehr-Jones , Yang Liu
CPC分类号： G02F1/025 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/035 , G02F1/0353 , G02F1/0356 , G02F1/2257 , G02F2001/0113 , G02F2001/0152
摘要： A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
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公开(公告)号：US09810964B2
公开(公告)日：2017-11-07
申请号：US14394206
申请日：2013-03-06
申请人： LEICA GEOSYSTEMS AG
发明人： Henri Porte , Alexandre Mottet , Thomas Luthi , Burkhard Bockem
IPC分类号： G02F1/01 , G02F1/225 , G02F1/035 , G01S17/36 , G01S7/481 , G01B9/02 , G01B11/14 , G01S17/32 , G02F1/365 , G02F1/03
CPC分类号： G02F1/2255 , G01B9/02049 , G01B11/14 , G01S7/4812 , G01S17/32 , G01S17/36 , G02F1/0316 , G02F1/0356 , G02F1/365
摘要： An electro-optic modulator includes a waveguide of a nonlinear optical material and an electrode line for generating an electrical field in a modulating region of the waveguide when a voltage is applied to the electrode line, thereby modulating light passing through the waveguide. Therein, the forward electro-optic response of the modulating region is the same as the backward electro-optic response; and the electro-optic response has a band-pass or a low-pass characteristic. A distance measuring device includes a light source emitting light, and such an electro-optic modulator arranged such that the emitted light passes through the electro-optic modulator in a first direction before being emitted from the distance measuring device, and after being reflected from a target passes through the electro-optic modulator in a second direction which is opposite to the first direction.
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公开(公告)号：US20170227798A1
公开(公告)日：2017-08-10
申请号：US15515098
申请日：2015-09-30
CPC分类号： G02F1/0316 , G02F1/01 , G02F1/035 , G02F1/0356 , G02F1/065 , G02F1/313 , G02F2201/46 , G02F2202/20
摘要： An optical device is provided, which includes: an optical waveguide provided in a substrate having an electro-optic effect; a signal electrode provided on the substrate and above the optical waveguide; and a peeling prevention film which is provided on at least a part of an outer peripheral portion of the substrate and at a position spaced apart from the signal electrode, and also serves as a ground electrode.
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公开(公告)号：US09638942B2
公开(公告)日：2017-05-02
申请号：US14840409
申请日：2015-08-31
发明人： Thomas Baehr-Jones , Yang Liu
CPC分类号： G02F1/025 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/035 , G02F1/0353 , G02F1/0356 , G02F1/2257 , G02F2001/0113 , G02F2001/0152
摘要： A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
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