公开(公告)号：US20190000880A1

公开(公告)日：2019-01-03

申请号：US16066855

申请日：2016-12-30

申请人： Gregory Motz ,  Konstantinos John Mavrakias ,  Jinbiao Liu ,  Lei Liu ,  Qiangang Zheng ,  Guoliang Xun ,  Qitao Xiao ,  Novartis AG ,  The Trustees of the University of Pennsylvania

发明人： Gregory Motz ,  Konstantinos John Mavrakias ,  Jinbiao Liu ,  Lei Liu ,  Qiangang Zheng ,  Guoliang Xun ,  Qitao Xiao

IPC分类号： A61K35/17 ,  C07D207/34 ,  C12N5/0783 ,  C07D401/14 ,  C12N15/113 ,  A61P35/00 ,  C07K16/28 ,  C07K16/24 ,  C07K16/30

摘要： Provided are the use of LSD1 inhibitors in connection with use and manufacture of immune effector cells (e.g., T cells, NK cells), e.g., engineered to express a chimeric antigen receptor (CAR), to treat a subject having a disease, e.g., a disease associated with expression of a tumor antigen.

公开(公告)号：US20190298715A1

公开(公告)日：2019-10-03

申请号：US16338085

申请日：2017-09-29

申请人： Gregory Motz ,  Konstantinos John Mavrakias ,  Jinbiao Liu ,  Lei Liu ,  Qiangang Zheng ,  Guoliang Xun ,  Qitao Xiao ,  Novartis AG ,  The Trustees of the University of Pennsylvania

发明人： Gregory Motz ,  Konstantinos John Mavrakias ,  Jinbiao Liu ,  Lei Liu ,  Qiangang Zheng ,  Guoliang Xun ,  Qitao Xiao

IPC分类号： A61K31/496 ,  A61K31/444 ,  C12N15/113 ,  A61K31/404 ,  A61K35/17

摘要： Provided herein is the use of LSD1 inhibitors in connection with use and manufacture of immune effector cells (e.g., T cells, NK cells), e.g., engineered to express a chimeric antigen receptor (CAR), to treat a subject having a disease, e.g., a disease associated with expression of a tumor antigen.

公开(公告)号：US08252689B2

公开(公告)日：2012-08-28

申请号：US13142736

申请日：2011-04-12

申请人： Tao Yang ,  Jinbiao Liu ,  Xiaobin He ,  Chao Zhao ,  Dapeng Chen

发明人： Tao Yang ,  Jinbiao Liu ,  Xiaobin He ,  Chao Zhao ,  Dapeng Chen

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  H01L21/31155 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/78

摘要： The present invention provides a chemical-mechanical planarization method. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP.

摘要翻译： 本发明提供了一种化学机械平面化方法。 化学机械平面化方法包括：在栅极的侧面设置包括栅极和源极/漏极区域的衬底，栅极和源极/漏极区域被绝缘层覆盖，并且绝缘层包括在上方的突出部分 栅极和位于栅极之间的衬底表面上方的凹陷部分; 选择性地掺杂绝缘层，使得只有突出部分被掺杂; 并且在掺杂之后在衬底上执行CMP以去除突出部分并使衬底的表面平坦化。 通过选择性地掺杂绝缘层，该方法仅使掺杂的绝缘层的突出部分增加了CMP中的浆料对突出部分的材料的腐蚀攻击，并且增加了突出部分的材料的去除速率 由CMP。

公开(公告)号：US20120135589A1

公开(公告)日：2012-05-31

申请号：US13142736

申请日：2011-04-12

申请人： Tao Yang ,  Jinbiao Liu ,  Xiaobin He ,  Chao Zhao ,  Dapeng Chen

发明人： Tao Yang ,  Jinbiao Liu ,  Xiaobin He ,  Chao Zhao ,  Dapeng Chen

IPC分类号： H01L21/306 ,  H01L21/304 ,  H01L21/28

CPC分类号： H01L21/31053 ,  H01L21/31155 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/78

摘要： The present invention provides a chemical-mechanical planarization method and a method for fabricating a metal gate in gate last process. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP, thereby improving the within-die uniformity of the process, consequently, there will not be excess metal in the insulating layer between gates, thereby preventing device short circuit risk induced by POP CMP process.

摘要翻译： 本发明提供一种化学机械平面化方法及其制造方法。 化学机械平面化方法包括：在栅极的侧面设置包括栅极和源极/漏极区域的衬底，栅极和源极/漏极区域被绝缘层覆盖，并且绝缘层包括在上方的突出部分 栅极和位于栅极之间的衬底表面上方的凹陷部分; 选择性地掺杂绝缘层，使得只有突出部分被掺杂; 并且在掺杂之后在衬底上执行CMP以去除突出部分并使衬底的表面平坦化。 通过选择性地掺杂绝缘层，该方法仅使掺杂的绝缘层的突出部分增加了CMP中的浆料对突出部分的材料的腐蚀攻击，并且增加了突出部分的材料的去除速率 通过CMP，从而提高了工艺的管芯内均匀性，因此在栅极之间的绝缘层中不会有过多的金属，从而防止POP CMP工艺引起的器件短路风险。

公开(公告)号：US11420970B1

公开(公告)日：2022-08-23

申请号：US17327226

申请日：2021-05-21

申请人： NOVARTIS AG

发明人： Haibing Deng ,  Jinbiao Liu ,  Counde Oyang ,  Ce Wang ,  Qitao Xiao ,  Guoliang Xun ,  Haiqiang Zeng

IPC分类号： C07D473/34

摘要： The present invention provides a compound of Formula (I): or an enantiomer, an enantiomeric mixture, or a pharmaceutically acceptable salt thereof; wherein the variables are as defined herein. The present invention further provides pharmaceutical compositions comprising such compounds; and methods of using such compounds for treating a disease or condition mediated by nuclear SET domain-containing protein 2 (NSD2).