公开(公告)号：US5082547A

公开(公告)日：1992-01-21

申请号：US649079

申请日：1991-02-01

Applicant: Gregory W. DeLarge

Inventor： Gregory W. DeLarge

IPC: H01J37/32 ,  H05K3/00

CPC classification number: H05K3/0055 ,  H01J37/32477 ,  H01J2237/0262 ,  H05K2203/095 ,  Y10S156/914

Abstract: An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.

Abstract translation: 一种改进的等离子体蚀刻反应器，其具有真空室并且包括静电屏蔽。 该室具有被诸如特氟隆之类的电介质层覆盖的内壁表面，该特氟隆又在其面向内的表面上覆盖有诸如铝的导电层。 这提供了更均匀的等离子体反应。 该室是具有交替的带电和接地电极的类型。