公开(公告)号：US20240136160A1

公开(公告)日：2024-04-25

申请号：US17971205

申请日：2022-10-20

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Andrew C. LAM ,  Zeqiong ZHAO ,  Jianhua ZHOU ,  Hshiang AN ,  Suhail ANWAR ,  Yoshitake NAKAJIMA ,  Fu-ting CHANG

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01J37/32715 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32183 ,  H01J2237/0262 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.

公开(公告)号：US11869748B2

公开(公告)日：2024-01-09

申请号：US17014684

申请日：2020-09-08

Applicant: Kokusai Electric Corporation

Inventor： Takeshi Yasui ,  Katsunori Funaki ,  Yasutoshi Tsubota ,  Koichiro Harada

IPC: H01J37/32 ,  C23C14/00 ,  C23C14/06 ,  C23C16/44

CPC classification number: H01J37/321 ,  H01J37/32697 ,  C23C14/0068 ,  C23C14/0641 ,  C23C16/4401 ,  H01J37/3244 ,  H01J37/32504 ,  H01J2237/0262

Abstract: Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.

公开(公告)号：US09653261B2

公开(公告)日：2017-05-16

申请号：US14400569

申请日：2013-05-14

Applicant: MAPPER LITHOGRAPHY IP B.V.

Inventor： Alexander Hendrik Vincent Van Veen ,  Willem Henk Urbanus

IPC: G03B27/52 ,  H01J37/317 ,  H01J37/09 ,  H01J37/30 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J37/3007 ,  H01J37/302 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/026 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/16 ,  H01J2237/182 ,  H01J2237/188

Abstract: The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.

公开(公告)号：US09640363B2

公开(公告)日：2017-05-02

申请号：US15282028

申请日：2016-09-30

Applicant: Institute Of Physics, Chinese Academy Of Sciences

Inventor： Guoqiang Yu ,  Peng Guo ,  Xiufeng Han ,  Chaohui Guo ,  Xiaoyu Sun ,  Xiangqian Zhou

IPC: H01J37/09 ,  H01F41/00 ,  G01R33/09 ,  H01L43/12 ,  H01F7/20 ,  H01J37/141

CPC classification number: H01J37/09 ,  G01R33/093 ,  G01R33/096 ,  H01F7/202 ,  H01F7/204 ,  H01F41/00 ,  H01J37/141 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/28 ,  H01J2237/31754 ,  H01L43/12

Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device, which comprises a power supply, a magnetic-field generation device and a pair of magnetic poles. The magnetic-field generation device comprises a coil and a magnetic conductive soft iron core. The power supply is connected to the coil, which is wound on the soft iron core to generate a magnetic field. The soft iron core is of a semi-closed frame structure and the magnetic poles are at the ends of the frame structure. The stage is inside a vacuum chamber. The poles are oppositely arranged inside the vacuum chamber relative to the stage. The coil and the soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the stage and apply a local magnetic field.

公开(公告)号：US20160133433A1

公开(公告)日：2016-05-12

申请号：US14893669

申请日：2014-03-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masashi FUJITA ,  Masahiro TSUNODA ,  Katsunori ONUKI ,  Katsuya AIBARA ,  Seiichi SHINDO ,  Takaaki NISHIMORI

IPC: H01J37/16 ,  H01J37/18

CPC classification number: H01J37/165 ,  H01J37/09 ,  H01J37/18 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/0266 ,  H01J2237/26 ,  H01L21/6719 ,  H01L21/67201

Abstract: An object of the present invention is to provide a charged particle beam device that suppresses the influence of an external electromagnetic wave, even when a shielding member, such as a vacuum valve, is in the open state. To achieve the above object, a charged particle beam device including a vacuum chamber (111) having an opening (104) that surrounds a sample delivery path is proposed. The charged particle beam device includes a conductive material (118) surrounding the opening (104) for conduction between the vacuum chamber (111) and a conductive member (106) disposed on the atmosphere side. According to an embodiment of the present invention, it is possible to restrict an electromagnetic wave (117) from reaching the sample chamber via the delivery path.

Abstract translation: 本发明的目的是提供一种抑制外部电磁波的影响的带电粒子束装置，即使在诸如真空阀的屏蔽构件处于打开状态时也是如此。 为了实现上述目的，提出了一种包括具有围绕样品传送路径的开口（104）的真空室（111）的带电粒子束装置。 带电粒子束装置包括围绕开口（104）的导电材料（118），用于在真空室（111）和设置在大气侧的导电构件（106）之间传导。 根据本发明的实施例，可以限制电磁波（117）经由输送路径到达样品室。

公开(公告)号：US09000370B2

公开(公告)日：2015-04-07

申请号：US14512672

申请日：2014-10-13

Applicant: Hermes Microvision Inc.

Inventor： Weiming Ren ,  Zhongwei Chen

IPC: H01J37/02 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/14 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/0045 ,  H01J2237/0262 ,  H01J2237/1405 ,  H01J2237/2801 ,  H01J2237/2803

Abstract: The present invention provides means and corresponding embodiments to control charge-up in an electron beam apparatus, which can eliminate the positive charges soon after being generated on the sample surface within a frame cycle of imaging scanning. The means are to let some or all of secondary electrons emitted from the sample surface return back to neutralize positive charges built up thereon so as to reach a charge balance within a limited time period. The embodiments use control electrodes to generate retarding fields to reflect some of secondary electrons with low kinetic energies back to the sample surface.

Abstract translation: 本发明提供了用于控制电子束装置中的充电的装置和相应的实施例，其可以在成像扫描的帧周期内在样品表面上产生后不久就消除正电荷。 该方法是使从样品表面发射的二次电子的一些或全部返回到中和积聚在其上的正电荷，从而在有限的时间段内达到电荷平衡。 这些实施例使用控制电极产生延迟场，以将具有低动能的一些二次电子反射回样品表面。

公开(公告)号：US07655930B2

公开(公告)日：2010-02-02

申请号：US11689769

申请日：2007-03-22

Applicant: Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

Inventor： Yongzhang Huang ,  Neil K Colvin ,  Kevin J Hoyt

IPC: H01J37/08 ,  H01J7/24

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0262 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166

Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 密封件具有陶瓷体，该陶瓷体具有沿着周向外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。

公开(公告)号：US5082547A

公开(公告)日：1992-01-21

申请号：US649079

申请日：1991-02-01

Applicant: Gregory W. DeLarge

Inventor： Gregory W. DeLarge

IPC: H01J37/32 ,  H05K3/00

CPC classification number: H05K3/0055 ,  H01J37/32477 ,  H01J2237/0262 ,  H05K2203/095 ,  Y10S156/914

Abstract: An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.

Abstract translation: 一种改进的等离子体蚀刻反应器，其具有真空室并且包括静电屏蔽。 该室具有被诸如特氟隆之类的电介质层覆盖的内壁表面，该特氟隆又在其面向内的表面上覆盖有诸如铝的导电层。 这提供了更均匀的等离子体反应。 该室是具有交替的带电和接地电极的类型。

公开(公告)号：US20230360879A1

公开(公告)日：2023-11-09

申请号：US18196296

申请日：2023-05-11

Applicant: ASML Netherlands B.V.

Inventor： Jan-Gerard Cornelis VAN DER TOORN ,  Paulus Martinus Hubertus VISSERS

IPC: H01J37/20 ,  H02G11/00

CPC classification number: H01J37/20 ,  H02G11/00 ,  H01J2237/0262 ,  H01J2237/2007

Abstract: The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

公开(公告)号：US11705252B2

公开(公告)日：2023-07-18

申请号：US17403849

申请日：2021-08-16

Applicant: ASML Netherlands B.V.

Inventor： Alexander Hendrik Vincent Van Veen ,  Willem Henk Urbanus ,  Marco Jan-Jaco Wieland

IPC: H01J37/30 ,  G21K5/04 ,  G21K1/02 ,  H01J37/317 ,  H01J37/16 ,  H01J37/12

CPC classification number: G21K5/04 ,  G21K1/02 ,  H01J37/12 ,  H01J37/16 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/024 ,  H01J2237/0213 ,  H01J2237/0216 ,  H01J2237/0262 ,  H01J2237/032 ,  H01J2237/1207 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/30472

Abstract: The disclosure relates to an electron-optical module of an electron-optical apparatus. The electron-optical module comprises a vacuum chamber, a high voltage shielding arrangement located within the vacuum chamber, and an aperture array configured to form a plurality of beamlets from an electron beam and located within the high voltage shielding arrangement. Wherein the electron-optical module can be configured to be removable from the electron-optical apparatus.