摘要:
A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.
摘要:
A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.
摘要:
A method for forming a pixel image sensor that has a high shutter rejection ratio for preventing substrate charge leakage and prevents generation of photoelectrons within a floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
摘要:
A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
摘要:
A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.
摘要:
A multiple photosensor pixel image sensor sense differentiated color components of light. The multiple photosensor pixel image sensor has a plurality of photo-sensing devices formed with the surface of the substrate. Each photo-sensing device has a structure adjusted to convert photons of the light to photoelectrons representative of a magnitude of the color component of the light for which the structure of the photo-sensing device is adjusted. Each multiple photosensor pixel image sensor includes at least one storage node to selectively receive photoelectrons from each photo-sensing device and triggering switches connected to selectively and sequentially transfer the photoelectrons from each of the plurality of photo-sensing devices to the storage node. At least one reset triggering switch is connected to the one storage node to place the storage node to a reset voltage level after integration and sensing of the photoelectrons.
摘要:
A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
摘要:
A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage node. An opaque metallic silicide layer is deposited on and a metal shield is fabricated above the storage node and storage node control transistor switches to prevent light from impinging on the storage node and storage node control transistor switches and thus preventing generation of photoelectrons at the storage node and storage node control transistor switches. A guard ring surrounds the photo sensing area, the storage node, and the storage node control transistor switches and is in contact with the biasing voltage and reduces cross-talk from photoelectrons drifting from adjacent image sensors.
摘要:
A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.
摘要:
An imaging system provides a serial video signal that is indicative of the intensity of the light. The imaging system has an array of pixel image sensors arranged in rows and columns. A control circuit is in communication with the rows of the array and the plurality of column switches. The control circuit generates reset control signals, transfer gating signals, pixel image sensor initiation signals for each selected row for controlling resetting, integration of photoelectrons generated from the light impinging upon the array of pixel image sensors, charge transfer of the photoelectrons from the photosensing devices to the charge storage device, and to activate the photoelectron sensing devices on each row to generate output signals from each of the pixel image sensors on a selected row. The control circuit generates the column selection signals for transfer of the output signals from selected rows to form a serial video output signal.