Column averaging/row binning circuit for image sensor resolution adjustment in lower intensity light environment
    1.
    发明授权
    Column averaging/row binning circuit for image sensor resolution adjustment in lower intensity light environment 有权
    列平均/行分类电路,用于在较低强度的光环境中进行图像传感器分辨率调整

    公开(公告)号:US07515183B2

    公开(公告)日:2009-04-07

    申请号:US10997383

    申请日:2004-11-24

    IPC分类号: H04N5/217 H04N3/14 H04N5/335

    CPC分类号: H04N9/045 H04N5/347 H04N5/374

    摘要: A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

    摘要翻译: 光传感器图像分辨率调节装置与以列和行组织的图像光传感器阵列通信,并且具有以诸如Bayer图案的图案排列以检测光的多个传感器类型。 光传感器图像分辨率调节装置具有光传感器阵列抽取电路,以将图像光传感器阵列分割成多个子组。 列平均电路对子组内常用彩色光电传感器的光转换电信号进行平均。 行平均电路在高光强度条件下对来自子组内的颜色相邻行的相邻光转换电信号的常用颜色进行平均。 在低光条件下,行分组电路将来自子组内的颜色相邻行的相邻光转换电信号的公共颜色相集成。

    Image sensor having resolution adjustment employing an analog column averaging/row averaging for high intensity light or row binning for low intensity light

    公开(公告)号:US20060113459A1

    公开(公告)日:2006-06-01

    申请号:US10999875

    申请日:2004-11-30

    IPC分类号: H01L27/00

    CPC分类号: H04N9/045 H04N5/347

    摘要: A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor
    3.
    发明申请
    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor 有权
    针对快照操作CMOS传感器具有高快门抑制比的固定光电二极管(PPD)像素

    公开(公告)号:US20090042331A1

    公开(公告)日:2009-02-12

    申请号:US12229749

    申请日:2008-08-26

    IPC分类号: H01L31/18

    摘要: A method for forming a pixel image sensor that has a high shutter rejection ratio for preventing substrate charge leakage and prevents generation of photoelectrons within a floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

    摘要翻译: 一种形成像素图像传感器的方法,该像素图像传感器具有高的遮光率以防止基板电荷泄漏并且防止浮动扩散存储节点内的光电子产生和像素图像传感器的存储节点控制晶体管开关。 像素图像传感器,其防止来自与像素图像传感器相邻的像素图像传感器的光电子的基板电荷泄漏。 像素图像传感器被制造在具有隔离屏障和载流子传导阱的衬底上。 形成在浮动扩散存储节点下面的隔离屏障允许通过排出杂散载流子并防止它们到达浮动扩散存储节点而进行有效的隔离。 与深N阱隔离屏障结合的载流子传导将被钉扎的光电二极管区域与浮动扩散存储节点下方的深N阱隔离屏障分开。

    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor
    4.
    发明申请
    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor 有权
    针对快照操作CMOS传感器具有高快门抑制比的固定光电二极管(PPD)像素

    公开(公告)号:US20070114629A1

    公开(公告)日:2007-05-24

    申请号:US11284300

    申请日:2005-11-21

    IPC分类号: H01L31/0232

    摘要: A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

    摘要翻译: 像素图像传感器具有高的快门抑制比,其防止基板电荷泄漏到像素图像传感器的浮动扩散存储节点,并且防止像素图像传感器的浮动扩散存储节点和存储节点控制晶体管开关内的光电子的产生。 像素图像传感器,其防止来自与像素图像传感器相邻的像素图像传感器的光电子的基板电荷泄漏。 像素图像传感器被制造在具有隔离屏障和载流子传导阱的衬底上。 形成在浮动扩散存储节点下面的隔离屏障允许通过排出杂散载流子并防止它们到达浮动扩散存储节点而进行有效的隔离。 与深N阱隔离屏障结合的载流子传导将被钉扎的光电二极管区域与浮动扩散存储节点下方的深N阱隔离屏障分开。

    Column averaging/row averaging circuit for image sensor resolution adjustment in high intensity light environment

    公开(公告)号:US20060113458A1

    公开(公告)日:2006-06-01

    申请号:US10999843

    申请日:2004-11-30

    IPC分类号: H01L27/00

    CPC分类号: H04N9/045

    摘要: A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

    Multiple photosensor pixel
    6.
    发明授权
    Multiple photosensor pixel 有权
    多个光电传感器像素

    公开(公告)号:US07427734B2

    公开(公告)日:2008-09-23

    申请号:US11252840

    申请日:2005-10-18

    IPC分类号: H01L27/00

    CPC分类号: H01L27/14603 H01L27/14645

    摘要: A multiple photosensor pixel image sensor sense differentiated color components of light. The multiple photosensor pixel image sensor has a plurality of photo-sensing devices formed with the surface of the substrate. Each photo-sensing device has a structure adjusted to convert photons of the light to photoelectrons representative of a magnitude of the color component of the light for which the structure of the photo-sensing device is adjusted. Each multiple photosensor pixel image sensor includes at least one storage node to selectively receive photoelectrons from each photo-sensing device and triggering switches connected to selectively and sequentially transfer the photoelectrons from each of the plurality of photo-sensing devices to the storage node. At least one reset triggering switch is connected to the one storage node to place the storage node to a reset voltage level after integration and sensing of the photoelectrons.

    摘要翻译: 多个光电传感器像素图像传感器感测光的不同颜色分量。 多个光电传感器像素图像传感器具有形成有基板表面的多个感光装置。 每个感光装置具有被调整以将光的光子转换为光电子的结构,所述光电子代表调整了感光装置的结构的光的颜色分量的大小。 每个多个光电传感器像素图像传感器包括至少一个存储节点,用于选择性地从每个光感测装置接收光电子,并且触发连接以选择性地并顺序地将光电子从多个光感测装置中的每一个传送到存储节点的开关。 至少一个复位触发开关连接到一个存储节点,以便在积分和感测光电子之后将存储节点置于复位电压电平。

    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor
    7.
    发明授权
    Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor 有权
    针对快照操作CMOS传感器具有高快门抑制比的固定光电二极管(PPD)像素

    公开(公告)号:US07423302B2

    公开(公告)日:2008-09-09

    申请号:US11284300

    申请日:2005-11-21

    IPC分类号: H01L31/062 H01L31/113

    摘要: A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.

    摘要翻译: 像素图像传感器具有高的快门抑制比,其防止基板电荷泄漏到像素图像传感器的浮动扩散存储节点,并且防止像素图像传感器的浮动扩散存储节点和存储节点控制晶体管开关内的光电子的产生。 像素图像传感器,其防止来自与像素图像传感器相邻的像素图像传感器的光电子的基板电荷泄漏。 像素图像传感器被制造在具有隔离屏障和载流子传导阱的衬底上。 形成在浮动扩散存储节点下面的隔离屏障允许通过排出杂散载流子并防止它们到达浮动扩散存储节点而进行有效的隔离。 与深N阱隔离屏障结合的载流子传导将被钉扎的光电二极管区域与浮动扩散存储节点下方的深N阱隔离屏障分开。

    Snapshot CMOS image sensor with high shutter rejection ratio
    8.
    发明申请
    Snapshot CMOS image sensor with high shutter rejection ratio 有权
    具有高快门抑制比的快照CMOS图像传感器

    公开(公告)号:US20060267053A1

    公开(公告)日:2006-11-30

    申请号:US11139743

    申请日:2005-05-27

    IPC分类号: H01L21/00 H01L31/062

    摘要: A pixel image sensor has an isolation barrier and diffusion well connected to a biasing voltage to prevent substrate charge leakage caused by photoelectrons generated in the substrate beneath a photon sensing area of the pixel image sensor from drifting to a storage node. An opaque metallic silicide layer is deposited on and a metal shield is fabricated above the storage node and storage node control transistor switches to prevent light from impinging on the storage node and storage node control transistor switches and thus preventing generation of photoelectrons at the storage node and storage node control transistor switches. A guard ring surrounds the photo sensing area, the storage node, and the storage node control transistor switches and is in contact with the biasing voltage and reduces cross-talk from photoelectrons drifting from adjacent image sensors.

    摘要翻译: 像素图像传感器具有隔离屏障和扩散阱,其良好地连接到偏置电压,以防止由在像素图像传感器的光子感测区域下方的基板中产生的光电子漂移到存储节点造成的基板电荷泄漏。 不透明的金属硅化物层沉积在存储节点和存储节点控制晶体管开关之上并且在存储节点和存储节点控制晶体管开关上制造金属屏蔽,以防止光照射到存储节点和存储节点控制晶体管开关上,从而防止在存储节点处产生光电子, 存储节点控制晶体管开关。 保护环围绕光感测区域,存储节点和存储节点控制晶体管开关,并且与偏置电压接触并且减少从相邻图像传感器漂移的光电子的串扰。

    Column averaging/row binning circuit for image sensor resolution adjustment in lower intensity light environment

    公开(公告)号:US20060108506A1

    公开(公告)日:2006-05-25

    申请号:US10997383

    申请日:2004-11-24

    IPC分类号: H01L27/00

    CPC分类号: H04N9/045 H04N5/347 H04N5/374

    摘要: A photo-sensor image resolution adjustment apparatus is in communication with an array of image photo-sensors that are organized in columns and rows and have multiple sensor types arranged in a pattern such as a Bayer pattern to detect light. The photo-sensor image resolution adjustment apparatus has a photo-sensor array decimation circuit to partition the array of image photo-sensors into a plurality of sub-groups. A column averaging circuit averages the light conversion electrical signals from common color photo-sensors within the sub-groups. A row averaging circuit averages the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups in high light intensity condition. In low light conditions, a row binning circuit integrates the common color adjacent light conversion electrical signals from color adjacent rows within the sub-groups.

    Imaging system for creating an output signal including data double-sampled from an image sensor
    10.
    发明授权
    Imaging system for creating an output signal including data double-sampled from an image sensor 有权
    用于创建包括从图像传感器双重采样的数据的输出信号的成像系统

    公开(公告)号:US08681253B2

    公开(公告)日:2014-03-25

    申请号:US13196283

    申请日:2011-08-02

    IPC分类号: H04N3/14

    CPC分类号: H04N5/335

    摘要: An imaging system provides a serial video signal that is indicative of the intensity of the light. The imaging system has an array of pixel image sensors arranged in rows and columns. A control circuit is in communication with the rows of the array and the plurality of column switches. The control circuit generates reset control signals, transfer gating signals, pixel image sensor initiation signals for each selected row for controlling resetting, integration of photoelectrons generated from the light impinging upon the array of pixel image sensors, charge transfer of the photoelectrons from the photosensing devices to the charge storage device, and to activate the photoelectron sensing devices on each row to generate output signals from each of the pixel image sensors on a selected row. The control circuit generates the column selection signals for transfer of the output signals from selected rows to form a serial video output signal.

    摘要翻译: 成像系统提供指示光强度的串行视频信号。 成像系统具有排列成行和列的像素图像传感器阵列。 控制电路与阵列的行和多个列开关连通。 控制电路产生复位控制信号,传送门控信号,用于每个选定行的像素图像传感器起始信号,用于控制复位,从照射在像素图像传感器阵列上的光产生的光电子的积分,光电子从光敏器件的电荷转移 并且激活每行上的光电子感测装置,以产生来自所选行上的每个像素图像传感器的输出信号。 控制电路产生列选择信号,用于传送来自所选行的输出信号以形成串行视频输出信号。