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    METHOD FOR FORMING SEMICONDUCTOR MEMORY CAPACITOR WITHOUT CELL-TO-CELL BRIDGES
    1.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR MEMORY CAPACITOR WITHOUT CELL-TO-CELL BRIDGES 失效
    无细胞桥形成半导体存储器电容器的方法

    公开(公告)号：US20080102594A1

    公开(公告)日：2008-05-01

    申请号：US11776750

    申请日：2007-07-12

    申请人： Gyu Hyun KIM ,  Yong Soo CHOI

    发明人： Gyu Hyun KIM ,  Yong Soo CHOI

    IPC分类号： H01L21/306

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  Y10S438/905

    摘要： A capacitor is formed by forming a mold insulating layer with a plurality of storage node holes over a semiconductor substrate. A metal storage node is formed on the surface of each of the storage node holes in the mold insulating layer. The mold insulating layer is removed by performing the following steps: loading the semiconductor substrate with the storage node in the chamber for in-situ cleaning, rinsing, and drying processes; removing the mold insulating layer by an etchant in the chamber; then rinsing the semiconductor substrate by introducing deionized water into the chamber while discharging the etchant out of the chamber; finally rinsing the rinsed semiconductor substrate with a mixed solution of the deionized water and organic solvent; drying the finally rinsed semiconductor substrate by IPA vapor in the chamber while discharging the mixed solution of the deionized water and organic solvent out of the chamber.

    摘要翻译： 通过在半导体衬底上形成具有多个存储节点孔的模具绝缘层来形成电容器。 金属存储节点形成在模具绝缘层中的每个存储节点孔的表面上。 通过执行以下步骤去除模具绝缘层：将具有存储节点的半导体衬底装载在用于原位清洁，漂洗和干燥过程的室中; 通过腔室中的蚀刻剂去除模具绝缘层; 然后通过将去离子水引入室中来冲洗半导体衬底，同时将蚀刻剂排出室; 最后用去离子水和有机溶剂的混合溶液冲洗冲洗的半导体衬底; 在室内通过IPA蒸气干燥最终漂洗的半导体衬底，同时将去离子水和有机溶剂的混合溶液排出室外。

    METHOD FOR FORMING CYCLINDER TYPE STORAGE NODE FOR PREVENTING CREATION OF WATERMARKS
    2.
    发明申请
    METHOD FOR FORMING CYCLINDER TYPE STORAGE NODE FOR PREVENTING CREATION OF WATERMARKS 审中-公开
    形成用于防止创建水印的循环型存储节点的方法

    公开(公告)号：US20080057706A1

    公开(公告)日：2008-03-06

    申请号：US11755112

    申请日：2007-05-30

    申请人： Gyu Hyun KIM ,  Yong Soo CHOI

    发明人： Gyu Hyun KIM ,  Yong Soo CHOI

    IPC分类号： H01L21/44

    CPC分类号： H01L28/91 ,  H01L27/10852

    摘要： A cylinder type storage node is made by, inter alia: forming a sacrificial oxide layer containing organic material over a semiconductor substrate; defining holes for storage nodes by etching the sacrificial oxide layer; forming storage nodes on surfaces of the holes; and removing the sacrificial oxide layer through wet etching and removing the organic material contained in the sacrificial oxide layer using ozone gas.

    摘要翻译： 圆筒型存储节点尤其通过在半导体衬底上形成含有有机材料的牺牲氧化物层; 通过蚀刻牺牲氧化物层来定义存储节点的孔; 在孔的表面上形成存储节点; 并且通过湿蚀刻去除牺牲氧化物层，并且使用臭氧气体除去包含在牺牲氧化物层中的有机材料。