摘要:
A method for fabricating a damage resistant photomask includes forming a photomask pattern on a substrate and forming a transparent, protective coating on the photomask pattern. The protective coating may be an electrical insulator (e.g., spin-on glass). In addition, an antireflective layer may be applied to the protective coating. A pellicle may also be attached over the protective coating. The protective coating may prevent electrostatic energy from forming on or arcing between features on the photomask pattern and damaging the features. The protective layer may also prevent the photomask pattern from being damaged by or reacting with other substances, such as cleaning solutions.
摘要:
A dust cover having a film with an inorganic, anti-reflective coating and method for use during semiconductor fabrication. The dust cover is primarily for use during photolithography. The dust cover may include an amorphous fluoropolymer film having an inorganic, anti-reflective coating attached to a frame. The inorganic, anti-reflective coating preferably has a refractive index below 1.4.
摘要:
A dust cover having a film with an inorganic, anti-reflective coating and method for use during semiconductor fabrication. The dust cover is primarily for use during photolithography. The dust cover may include an amorphous fluoropolymer film having an inorganic, anti-reflective coating attached to a frame. The inorganic, anti-reflective coating preferably has a refractive index below 1.4.
摘要:
A method for constructing a photomask assembly using an encoded mark is disclosed. The method includes comparing a first encoded mark located on a photomask with a second encoded mark located on a pellicle. The first encoded mark includes one or more first symbols and the second encoded mark includes one or more second symbols. The method further includes mounting the pellicle on the photomask if at least one of the symbols of the first encoded mark matches at least one of the symbols of the second encoded mark.
摘要:
A dust cover having a film with an inorganic, anti-reflective coating and method for use during semiconductor fabrication. The dust cover is primarily for use during photolithography. The dust cover may include an amorphous fluoropolymer film having an inorganic, anti-reflective coating attached to a frame. The inorganic, anti-reflective coating preferably has a refractive index below 1.4.