公开(公告)号：US6002164A

公开(公告)日：1999-12-14

申请号：US296269

申请日：1994-08-25

申请人： H. Ward Conru ,  Stephen George Starr

发明人： H. Ward Conru ,  Stephen George Starr

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L23/4951 ,  H01L2224/45144 ,  H01L2224/4826 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/14

摘要： A lead frame having a plurality of metallic conductors with each conductor having a coined or stamped region near its proximal end but spaced therefrom to provide pressure points to assure substantial even joining of the conductor to semiconductor chip via an insulative adhesive medium. The lead frame, when mounted on the active face of a semiconductor chip, has wires connecting terminals on the major active surface of the semiconductor chip to the bands on selected lead frame conductors. The lead frame on the semiconductor chip and the wires which connect the semiconductor chip terminals to the bands of selected lead frame conductors are then encapsulated with a suitable insulative material to form a semiconductor module or package.

摘要翻译： 具有多个金属导体的引线框架，每个导体在其近端附近具有压模区域或冲压区域，但与其隔开，以提供压力点，以确保通过绝缘粘合剂介质实质上均匀地将导体连接到半导体芯片。 引线框架安装在半导体芯片的主动面上时，具有将半导体芯片的主要有效表面上的端子连接到所选引线框架导体上的带的导线。 将半导体芯片上的引线框架和将半导体芯片端子连接到所选择的引线框架导体的带的导线然后用合适的绝缘材料封装以形成半导体模块或封装。

公开(公告)号：US5776790A

公开(公告)日：1998-07-07

申请号：US608162

申请日：1996-02-28

申请人： Stephen George Starr ,  John Conrad Kutt ,  Robert Henry Zalokar, Jr.

发明人： Stephen George Starr ,  John Conrad Kutt ,  Robert Henry Zalokar, Jr.

IPC分类号： C23C14/04 ,  C23C14/54 ,  H01L21/60 ,  H01L21/285

CPC分类号： C23C14/541 ,  C23C14/042 ,  C23C14/544 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025

摘要： A process of Pb/Sn evaporation eliminates haloes in the manufacture of solder bump interconnects. This robust process of forms solder bump interconnects and reduces critical molebdnum mask sensitivity. Vacuum evaporation through which Pb/Sn C4 pads are deposited is performed by maintaining parallel temperature gradients between the molybdenum mask and silicon wafer, thus resulting in elimination of connecting haloes and yield losses.

摘要翻译： Pb / Sn蒸发过程消除了制造焊料凸块互连中的晕圈。 这种形成焊料凸块互连的鲁棒过程并减少了临界摩擦掩模灵敏度。 通过保持钼掩模和硅晶片之间的平行温度梯度来进行沉积Pb / Sn C4焊盘的真空蒸发，从而消除连接晕环和产量损失。