公开(公告)号：US6002164A

公开(公告)日：1999-12-14

申请号：US296269

申请日：1994-08-25

申请人： H. Ward Conru ,  Stephen George Starr

发明人： H. Ward Conru ,  Stephen George Starr

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L23/4951 ,  H01L2224/45144 ,  H01L2224/4826 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/14

摘要： A lead frame having a plurality of metallic conductors with each conductor having a coined or stamped region near its proximal end but spaced therefrom to provide pressure points to assure substantial even joining of the conductor to semiconductor chip via an insulative adhesive medium. The lead frame, when mounted on the active face of a semiconductor chip, has wires connecting terminals on the major active surface of the semiconductor chip to the bands on selected lead frame conductors. The lead frame on the semiconductor chip and the wires which connect the semiconductor chip terminals to the bands of selected lead frame conductors are then encapsulated with a suitable insulative material to form a semiconductor module or package.

摘要翻译： 具有多个金属导体的引线框架，每个导体在其近端附近具有压模区域或冲压区域，但与其隔开，以提供压力点，以确保通过绝缘粘合剂介质实质上均匀地将导体连接到半导体芯片。 引线框架安装在半导体芯片的主动面上时，具有将半导体芯片的主要有效表面上的端子连接到所选引线框架导体上的带的导线。 将半导体芯片上的引线框架和将半导体芯片端子连接到所选择的引线框架导体的带的导线然后用合适的绝缘材料封装以形成半导体模块或封装。

公开(公告)号：US5086018A

公开(公告)日：1992-02-04

申请号：US694719

申请日：1991-05-02

申请人： H. Ward Conru ,  Gary H. Irish ,  Francis J. Pakulski ,  William J. Slattery ,  Stephen G. Starr ,  William C. Ward

发明人： H. Ward Conru ,  Gary H. Irish ,  Francis J. Pakulski ,  William J. Slattery ,  Stephen G. Starr ,  William C. Ward

IPC分类号： H01L21/60 ,  H01L21/56 ,  H01L23/495 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L24/32 ,  H01L21/56 ,  H01L23/4951 ,  H01L24/05 ,  H01L24/06 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/73215 ,  H01L2224/85909 ,  H01L2224/92147 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06579 ,  H01L2225/06596 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253

摘要： A method of making a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

摘要翻译： 一种制造半导体芯片的方法，其中可以容易且可再现地改善芯片和引线框架之间的导线通过导线。 这是通过改善导线与引线框架构件之间的接合而实现的，并且通过在每个导线与其相应引线之间产生附加的接触，即使接合的接触在接合点处或紧邻接合点处断裂或失效。 这通过在每个芯片的有源表面上放置绝缘层来实现，该绝缘层在其上承载有引线框架导体已经通过接合线连接的输入和输出接合焊盘。 绝缘层是热固性粘合剂，并且放置在引线框架，接合线和半导体芯片的有源面之上，使得当层压力施加到绝缘层时，电线将被压碎并保持抵靠它们各自的焊盘，并且 抵靠它们连接的各个引线，并且被粘合剂保护的半导体的有源面与其结合。 以这种方式，电线和引线之间的更大的接触增强，并且导电性的缺陷或故障减少或消除。

公开(公告)号：US4907734A

公开(公告)日：1990-03-13

申请号：US263806

申请日：1988-10-28

申请人： H. Ward Conru ,  Stephen E. Gons ,  Gordon C. Osborne, Jr. ,  Douglas W. Phelps, Jr. ,  Stephen G. Starr ,  William C. Ward

发明人： H. Ward Conru ,  Stephen E. Gons ,  Gordon C. Osborne, Jr. ,  Douglas W. Phelps, Jr. ,  Stephen G. Starr ,  William C. Ward

IPC分类号： H01R43/00 ,  B23K20/02 ,  B23K20/10 ,  B23K20/22 ,  B23K35/00 ,  H01L21/00 ,  H01L21/607 ,  H01R43/02 ,  H05K3/32 ,  H05K3/34

CPC分类号： H01L24/85 ,  B23K20/023 ,  B23K20/10 ,  B23K20/22 ,  B23K35/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01R43/02 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/78301 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85365 ,  H01L2224/85815 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H05K3/328 ,  H05K3/3457

摘要： A compression bond is formed between a gold or gold alloy wire and lead/tin solder by forming a head on the wire and forcing the head into a pad of the solder by thermosonic, or thermocompression, or ultrasonic compression bonding techniques. This forms a gold/tin intermetallic compound which in turn forms the bond. The head of the wire is maintained out of contact with any underlying surface, and surrounded by the solder.

公开(公告)号：US5151559A

公开(公告)日：1992-09-29

申请号：US805214

申请日：1991-12-11

申请人： H. Ward Conru ,  Gary H. Irish ,  Francis J. Pakulski ,  William J. Slattery ,  Stephen G. Starr ,  William C. Ward

发明人： H. Ward Conru ,  Gary H. Irish ,  Francis J. Pakulski ,  William J. Slattery ,  Stephen G. Starr ,  William C. Ward

IPC分类号： H01L21/56 ,  H01L23/495 ,  H01L25/065

CPC分类号： H01L24/32 ,  H01L21/56 ,  H01L23/4951 ,  H01L25/0657 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48464 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06579 ,  H01L2225/06596 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253

摘要： This is a semiconductor chip in which the conductive path between the chip and the lead frame via wires can be easily and reproduceably improved. This is accomplished by improving the bond between the wires and the lead frame members to which the wires are joined and by creating additional contacts between each wire and its respective lead even if the bonded contact breaks or fails at or immediately adjacent to the bonding point. This is accomplished by placing an insulating layer on the active surface of each chip, carrying input and output bonding pads thereon, to which lead frame conductors have been connected by bonding wires. The insulating layer is a thermosetting adhesive and is placed over the lead frame, the bonding wires and the active face of the semiconductor chip so that when a lamination force is applied to the insulating layer the wires will be crushed and held against their respective pads and against the respective leads to which they are connected and the active face of the semiconductor protected by the adhesive bonding thereto. In this way greater contact between the wires and the leads is enhanced and defects or failure in conductivity therebetween reduced or eliminated.

摘要翻译： 这是一种半导体芯片，其中可以容易且可再生地改善芯片和引线框架之间通过导线的导电路径。 这是通过改善导线与引线框架构件之间的接合而实现的，并且通过在每个导线与其相应引线之间产生附加的接触，即使接合的接触在接合点处或紧邻接合点处断裂或失效。 这通过在每个芯片的有源表面上放置绝缘层来实现，该绝缘层在其上承载有引线框架导体已经通过接合线连接的输入和输出接合焊盘。 绝缘层是热固性粘合剂，并且放置在引线框架，接合线和半导体芯片的有源面之上，使得当层压力施加到绝缘层时，电线将被压碎并保持抵靠它们各自的焊盘，并且 抵靠它们连接的各个引线，并且被粘合剂保护的半导体的有源面与其结合。 以这种方式，电线和引线之间的更大的接触增强，并且导电性的缺陷或故障减少或消除。