公开(公告)号：US20240188408A1

公开(公告)日：2024-06-06

申请号：US18387127

申请日：2023-11-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kosuke HIRONAKA ,  Shigeo HARA

IPC: H10K71/80 ,  H10K71/60

CPC classification number: H10K71/80 ,  H10K71/60

Abstract: A method for manufacturing an organic semiconductor element includes a process of forming a first terminal on a main surface of a substrate, a process of forming a first electrode on the main surface, a process of forming an organic semiconductor layer on the first electrode, a process of forming a second electrode on the organic semiconductor layer, a process of forming a sacrificial layer in a predetermined region on the main surface, a process of forming a barrier layer on the main surface by an ALD method to cover the first terminal, the first electrode, the second electrode, the organic semiconductor layer, and the sacrificial layer, and a process of removing the sacrificial layer and a portion of the barrier layer that covers the sacrificial layer. The organic semiconductor layer and the sacrificial layer are apart from each other after the process of forming the barrier layer.