公开(公告)号：US20040094755A1

公开(公告)日：2004-05-20

申请号：US10705901

申请日：2003-11-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toru Hirohata ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Masami Yamada

IPC: H01L029/06

CPC classification number: H01J1/34 ,  H01J2201/342

Abstract: The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 nullm or more but 2 nullm or less.

Abstract translation: 本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。 在光电阴极中，在基板的上层形成有光吸收层。 在光吸收层的上层形成电子发射层。 具有条纹状的接触层形成在电子发射层的上层。 在接触层的表面上形成由金属构成的表面电极。 调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。