公开(公告)号：US3865649A

公开(公告)日：1975-02-11

申请号：US29770072

申请日：1972-10-16

Applicant: HARRIS INTERTYPE CORP

Inventor： BEASOM JAMES D

IPC: H01L21/762 ,  H01L27/06 ,  H01L27/082 ,  H01L27/092 ,  H01L29/00 ,  H01L29/94 ,  H01L7/44

CPC classification number: H01L29/94 ,  H01L21/76297 ,  H01L27/0635 ,  H01L27/0826 ,  H01L27/0928 ,  H01L29/00 ,  Y10S148/049 ,  Y10S148/053 ,  Y10S148/085 ,  Y10S148/151

Abstract: P and N channel MOS''s, MOS capacitors, and PNP and NPN transistor devices are fabricated in isolated single crystal P and N type regions by a series of four deposition-diffusions common to both types of devices. The bases of PNP''s and the sources and drains of N channel MOS''s are formed simultaneously while the bases of NPN''s, and the sources and drains of P channel MOS''s, are also formed simultaneously. Thirdly, the emitters and collector contacts and guard rings of PNP''s, the base contacts for NPN''s, and the body contacts and guard rings for N channel MOS''s are simultaneously formed. Finally, an N+ type diffusion is performed to form the emitters and collector contacts of NPN''s, the source and drain contacts for N channel MOS''s, the base contacts for PNP''s, the body contacts for P channel MOS''s and one plate of MOS capacitors. An additional step may be performed to obtain thin gate oxide MOS''s and thin dielectric MOS capacitors. By surrounding the N channel MOS''s drain with a combination of the P+ guard ring and the gate metal, this device will function in the depletion mode.

Abstract translation: P和N沟道MOS，MOS电容器以及PNP和NPN晶体管器件通过一系列四种沉积扩散在两种类型的器件中共同制造在孤立的单晶P和N型区域中。 PNP的基极和N沟道MOS的源极和漏极同时形成，而NPN的基极和P沟道MOS的源极和漏极也同时形成。 第三，同时形成PNP的发射极和集电极触点和保护环，NPN的基极触点和N沟道MOS的主体触点和保护环。 最后，进行N +型扩散，形成NPN的发射极和集电极触点，N沟道MOS的源极和漏极接触点，PNP的基极触点，P沟道MOS的主体触点和MOS电容的一个板。 可以执行附加步骤以获得薄栅极氧化物MOS和薄的介电MOS电容器。 通过P +保护环和栅极金属的组合围绕N沟道MOS的漏极，该器件将在耗尽模式下工作。