公开(公告)号：US20130133691A1

公开(公告)日：2013-05-30

申请号：US13737975

申请日：2013-01-10

申请人： HEBEI UNIVERSITY OF TECHNOLOGY

发明人： Yuling LIU ,  Xinhuan NIU ,  Chenwei WANG ,  Yangang HE

IPC分类号： B08B3/08 ,  C23G1/06

CPC分类号： B08B3/08 ,  C11D3/0073 ,  C11D11/0047 ,  H01L21/02074

摘要： A method of cleaning tungsten plug surfaces in ultra large scale integrated circuits after chemical-mechanical polishing, the method including: a) preparing a cleaning solution by mixing deionized water, between 15 and 30 g/L of an active agent with respect to the deionized water, between 5 and 20 g/L of a chelating agent with respect to the deionized water, and between 1 and 60 g/L of a corrosion inhibitor with respect to the deionized water; b) after alkaline chemical-mechanical polishing, washing the tungsten plug surfaces using the cleaning solution at a flow rate of between 1000 and 4000 g/min for between 30 s and 3 min.

摘要翻译： 一种在化学机械抛光之后清洗超大规模集成电路中的钨塞表面的方法，该方法包括：a）通过将去离子水，15至30g / L的活性剂相对于去离子水 水，相对于去离子水为5〜20g / L的螯合剂，相对于去离子水为1〜60g / L的缓蚀剂; b）在碱性化学机械抛光后，使用清洗溶液以1000-4000g / min的流速洗涤钨塞表面30秒至3分钟。

公开(公告)号：US20130123158A1

公开(公告)日：2013-05-16

申请号：US13738965

申请日：2013-01-10

申请人： HEBEI UNIVERSITY OF TECHNOLOGY

发明人： Yuling LIU ,  Xiaoyan LIU ,  Na LIU ,  Yangang HE

IPC分类号： C11D1/72 ,  C11D3/00 ,  C11D3/33

CPC分类号： C11D1/72 ,  B08B3/08 ,  C11D3/0073 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074

摘要： A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate:; and at least between 0.5 and 2 min of washing time.

摘要翻译： 一种在抛光后在超大规模集成电路中清洗铜材表面的方法，该方法包括：a）将1〜4wt。 ％表面活性剂，0.5至3wt。 ％的螯合剂，0.1至5wt。 ％的腐蚀抑制剂和去离子水，得到pH值在7.4和8.2之间的水溶性清洁溶液; 和b）在以下条件下在碱性化学机械抛光之后使用清洁溶液洗涤铜材料表面：压力在2000-3000Pa之间; 1000〜5000 mL / min的流速： 并且洗涤时间至少为0.5至2分钟。