公开(公告)号：US11677314B2

公开(公告)日：2023-06-13

申请号：US17511422

申请日：2021-10-26

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gary Lin ,  Chung-Ping Ku ,  Nowa Wang

IPC: H02M7/219 ,  H02M1/42 ,  H02M3/158

CPC classification number: H02M1/4225 ,  H02M1/4233 ,  H02M3/1582 ,  H02M7/219

Abstract: A control circuit for a plurality of metal-oxide semiconductor field-effect transistors (MOSFETs) in a bridge circuit for rectifying an alternating current (AC) input to generate a direct-current (DC) output includes first and second high side controls and first and second low side controls for providing gate voltage signals to respective MOSFETs in the bridge circuit. Dead time controls are provided for establishing dead time intervals between activation of complementary MOSFETs in the bridge circuit. The low side controls provide gate voltage signals having sloped edges and the dead time controls include Zener diodes having reverse bias thresholds for determining the duration of the dead time intervals.

公开(公告)号：US20230127621A1

公开(公告)日：2023-04-27

申请号：US17511422

申请日：2021-10-26

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gary Lin ,  Chung-Ping Ku ,  Nowa Wang

IPC: H02M1/42 ,  H02M3/158 ,  H02M7/219

Abstract: A control circuit for a plurality of metal-oxide semiconductor field-effect transistors (MOSFETs) in a bridge circuit for rectifying an alternating current (AC) input to generate a direct-current (DC) output includes first and second high side controls and first and second low side controls for providing gate voltage signals to respective MOSFETs in the bridge circuit. Dead time controls are provided for establishing dead time intervals between activation of complementary MOSFETs in the bridge circuit. The low side controls provide gate voltage signals having sloped edges and the dead time controls include Zener diodes having reverse bias thresholds for determining the duration of the dead time intervals.