公开(公告)号：US20170053993A1

公开(公告)日：2017-02-23

申请号：US15306740

申请日：2014-04-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Reynaldo V Villavelez ,  Ning GE ,  Mun Hooi YAOW ,  Erik D Ness ,  David B Novak

IPC: H01L29/423 ,  H01L49/02

Abstract: The present subject matter relates to an integrated circuit. The integrated circuit includes a first metal layer and a second metal layer capacitively coupled to the first metal layer through a dielectric layer. Further, the second metal layer includes an electron leakage path to provide for leakage of charge from the second metal layer in a predetermined leak time period.

Abstract translation: 本主题涉及集成电路。 集成电路包括通过电介质层与第一金属层电容耦合的第一金属层和第二金属层。 此外，第二金属层包括电子泄漏路径，以在预定的泄漏时间段内提供来自第二金属层的电荷泄漏。