公开(公告)号：US20240203712A1

公开(公告)日：2024-06-20

申请号：US17909512

申请日：2021-07-14

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Shunta NOSAKA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32972 ,  H01L21/67253 ,  H01J37/32082 ,  H01J2237/24585

Abstract: Provided is a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system, capable of assigning an appropriate chemical element or molecule on the basis of the features of a peak shape and capable of performing wavelength identification with high accuracy. The plasma processing apparatus includes: a processing chamber in which a sample is plasma-processed; a radio-frequency power supply that supplies radio-frequency power to generate plasmas; and a sample table on which the sample is placed, the plasma processing apparatus further including an analysis unit that identifies chemical elements or molecules in monitored plasmas on the basis of a match degree between a first spectral waveform and a second spectral waveform, the match degree being obtained by comparing the first spectral waveform with the second spectral waveform, the first and second spectral waveforms being spectral waveforms of the emission of the monitored plasmas, wherein the second spectral waveform is a spectral waveform multiplied by a weight coefficient corresponding to the chemical element or the molecule.