公开(公告)号：US11906899B2

公开(公告)日：2024-02-20

申请号：US16785368

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoshitomo Nakagawa ,  Mitsuto Aso ,  Katsumi Suzuki ,  Mamoru Okabe ,  Masakatsu Hasuda

IPC: G03F1/74 ,  H01J37/317

CPC classification number: G03F1/74 ,  H01J37/3178

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.