公开(公告)号：US3720923A

公开(公告)日：1973-03-13

申请号：US3720923D

申请日：1971-07-06

Applicant: HONEYWELL INC

Inventor： CHEN D ,  ZOOK J

IPC: G11B5/00 ,  G11B7/013 ,  G11B11/105 ,  G11B20/12 ,  G11B20/14 ,  G11C13/04 ,  G11C7/00 ,  G11C29/00

CPC classification number: G11B7/24085 ,  G11B5/00 ,  G11B11/10515 ,  G11B11/10595 ,  G11B20/1217 ,  G11B20/14 ,  G11B2220/2525

Abstract: A beam addressed optical mass memory utilizes an alterable memory medium which exhibits a change in its optical properties as a function of time or as a function of write-rewrite cycles. A reference bit is recorded on the memory medium and one or more information bits are similarly recorded. The reference and information bits are subjected to essentially the same number of write-rewrite cycles, and therefore exhibit essentially identical changes in optical properties. Information is read out by sequentially directing the light beam to the reference bit and the information bits. A detector produces a reference signal indicative of the intensity of the light beam received from the reference bit and produces information signals indicative of the intensity of the light beam from each of the information bits. The reference signal is directed to a reference channel and temporarily stored. Each of the information signals is directed to an information channel. The reference signal is compared to each of the information signals and readout signals are produced which are indicative of the difference between or the ratio of the reference signal and each of the information signals.

Abstract translation: 波束寻址光学大容量存储器利用可变存储介质，其表现出其作为时间的函数的光学特性的变化或者作为写入重写周期的函数。 参考位被记录在存储介质上，同样记录一个或多个信息位。 参考和信息位受到基本上相同数量的写重写周期的影响，因此表现出基本相同的光学性质变化。 通过将光束顺序地引导到参考位和信息位来读出信息。 检测器产生指示从参考位接收的光束的强度的参考信号，并产生指示来自每个信息位的光束强度的信息信号。 参考信号被引导到参考通道并临时存储。 每个信息信号被引导到信息信道。 将参考信号与每个信息信号进行比较，并产生指示参考信号与每个信息信号之间的差异或比率的读出信号。

公开(公告)号：US3857734A

公开(公告)日：1974-12-31

申请号：US25044372

申请日：1972-05-04

Applicant: HONEYWELL INC

Inventor： CHEN D ,  OTTO G

IPC: C23C14/02 ,  H01F10/12 ,  H01F10/02

CPC classification number: H01F10/12 ,  C23C14/024 ,  Y10T428/3154

Abstract: Uniform magnetic thin films of manganese bismuth are produced on a nonmagnetic substrate capable of reacting with manganese, bismuth, or manganese bismuth. A thin passivating layer of oxidized aluminum covers the substrate and the manganese bismuth thin film overlays the thin passivating layer.

Abstract translation: 在能够与锰，铋或锰铋反应的非磁性基材上生产锰铋均匀的磁性薄膜。 氧化铝的薄钝化层覆盖基板，并且锰铋薄膜覆盖薄钝化层。