公开(公告)号：US3858306A

公开(公告)日：1975-01-07

申请号：US16957271

申请日：1971-08-05

Applicant: HONEYWELL INC

Inventor： KLOEK ARVID E ,  SCOTT MYRSYL WALTER

IPC: H01L21/388 ,  H01L31/00 ,  H01L15/02

CPC classification number: H01L21/388 ,  H01L31/00

Abstract: PN junctions are formed in a P type body of mercury cadmium telluride by heating an indium body to form hot indium, which is then deposited on a surface of the P type body. The hot indium is believed to cause localized heating of the P type body which is sufficient for the formation of an alloy junction, but insufficient for the complete displacement of mercury within the alloy junction.

Abstract translation: 通过加热铟体以形成热铟，在P型体中形成PN结，形成热铟，然后将其沉积在P型体的表面上。 据信这种热铟会引起P型体的局部加热，这对于形成合金接头是足够的，但不足以使合金结内的汞完全移位。