Plated wire memory fabrication
    1.
    发明授权
    Plated wire memory fabrication 失效
    电镀内存制造

    公开(公告)号:US3727304A

    公开(公告)日:1973-04-17

    申请号:US3727304D

    申请日:1970-09-28

    Applicant: HONEYWELL INC

    Inventor: GRANATO J MOORE R

    CPC classification number: H01F10/06 Y10T29/49069

    Abstract: A plated wire thin film memory assembly and fabrication method is shown and described wherein the plated wire is contained in a ''''tunnel structure'''' sandwiched between layers of a multi-layer printed circuit assembly.

    Abstract translation: 示出并描述了电镀线薄膜存储器组件和制造方法,其中电镀线被包含在夹在多层印刷电路组件的层之间的“隧道结构”中。

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