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公开(公告)号：US20150198873A1
公开(公告)日：2015-07-16
申请号：US14414357
申请日：2013-06-25
申请人： HOYA CORPORATION
发明人： Yasushi Okubo , Ryo Ohkubo
摘要： A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
摘要翻译： 一种适用于制造具有薄膜图案的相移掩模的掩模坯料，该薄膜图案由能够利用氟基气体进行干蚀刻的材料和基板刻图形构成。 掩模坯料100用于制造具有薄膜图案和基板雕刻图案的相移掩模。 掩模坯料100具有其中在透明基板1上依次层压蚀刻阻挡膜2，图案形成用薄膜3和蚀刻掩模膜4的结构。蚀刻阻挡膜2由以下材料制成： 含有铬和氧，氧含量大于50原子％。 薄膜3由可以通过氟基气体进行干蚀刻的材料制成。 蚀刻掩模膜4由含铬的材料制成，铬含量不小于45原子％，氧含量不大于30原子％。
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2.发明申请公开(公告)号：US20190004419A1
公开(公告)日：2019-01-03
申请号：US16125900
申请日：2018-09-10
申请人： HOYA CORPORATION
发明人： Osamu NOZAWA , Ryo Ohkubo , Hiroaki Shishido , Yasushi Okubo
摘要： A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.
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公开(公告)号：US09952497B2
公开(公告)日：2018-04-24
申请号：US15286635
申请日：2016-10-06
申请人： HOYA CORPORATION
发明人： Yasushi Okubo , Ryo Ohkubo
摘要： A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
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公开(公告)号：US09494852B2
公开(公告)日：2016-11-15
申请号：US14414357
申请日：2013-06-25
申请人： HOYA CORPORATION
发明人： Yasushi Okubo , Ryo Ohkubo
摘要： A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
摘要翻译： 一种适用于制造具有薄膜图案的相移掩模的掩模坯料，该薄膜图案由能够利用氟基气体进行干蚀刻的材料和基板刻图形构成。 掩模坯料100用于制造具有薄膜图案和基板雕刻图案的相移掩模。 掩模坯料100具有其中在透明基板1上依次层压蚀刻阻挡膜2，图案形成用薄膜3和蚀刻掩模膜4的结构。蚀刻阻挡膜2由以下材料制成： 含有铬和氧，氧含量大于50原子％。 薄膜3由可以通过氟基气体进行干蚀刻的材料制成。 蚀刻掩模膜4由含铬的材料制成，铬含量不小于45原子％，氧含量不大于30原子％。
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公开(公告)号：US10527931B2
公开(公告)日：2020-01-07
申请号：US16125900
申请日：2018-09-10
申请人： HOYA CORPORATION
发明人： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido , Yasushi Okubo
摘要： A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.
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公开(公告)号：US10101650B2
公开(公告)日：2018-10-16
申请号：US14910854
申请日：2014-09-05
申请人： HOYA CORPORATION
发明人： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido , Yasushi Okubo
摘要： A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.
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