公开(公告)号：US20250017015A1

公开(公告)日：2025-01-09

申请号：US18892852

申请日：2024-09-23

Applicant: HPSP Co., Ltd.

Inventor： Sungkil CHO

IPC: H10B43/30 ,  H10B43/27

Abstract: The present invention relates to a semiconductor device and a semiconductor device manufacturing method. The semiconductor device manufacturing method according to one embodiment comprises the steps of: forming a thin film structure on a substrate; forming a trench in the thin film structure; forming a blocking layer for covering at least a part of the trench; forming a charge storage layer on the blocking layer; doping the charge storage layer with carbon; forming a tunneling layer on the charge storage layer; and forming a channel layer for covering the tunneling layer and the substrate. According to embodiments, conformality of the charge storage layer can be increased during the manufacture of the semiconductor device.