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公开(公告)号：US20250157834A1
公开(公告)日：2025-05-15
申请号：US18723082
申请日：2022-12-20
Applicant: HPSP Co., Ltd.
Inventor： Kun Young LIM
IPC: H01L21/67
Abstract: The present invention provides a high-pressure heat treatment apparatus and a gas monitoring module used therefor, the high-pressure heat treatment apparatus comprising: an inner chamber formed to accommodate an object for heat treatment; an outer chamber having a first part and a second part disposed to face each other to define an accommodation space, and an inner O-ring and an outer O-ring disposed in a corresponding region between the first part and the second part, wherein the accommodation space accommodates the inner chamber; an air supply module configured to supply a reaction gas for the heat treatment to the inner chamber at a first pressure higher than atmospheric pressure, and to supply a protective gas to the outer chamber at a second pressure set in relation to the first pressure; a monitoring module having a buffer channel positioned between the inner O-ring and the outer O-ring and supplied with a buffer gas at a third pressure, and a sensing unit configured to sense an environment related to the buffer gas; and a control module configured to determine whether an internal leak of a gas flowing from the accommodation space to the buffer channel via the inner O-ring occurs, on the basis of a result of sensing the environment related to the buffer gas.
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公开(公告)号：US20230204288A1
公开(公告)日：2023-06-29
申请号：US18145336
申请日：2022-12-22
Applicant: HPSP Co., Ltd.
Inventor： Kun Young LIM
CPC classification number: F27B17/0025 , F27D7/02 , F27D2007/063
Abstract: Provided is a high pressure heat treatment apparatus including: an internal chamber accommodating an object to be heat-treated; an external chamber including a high-temperature zone accommodating the internal chamber and a low-temperature zone having a lower temperature than the high-temperature zone; a gas supply module including a process gas line for supplying a process gas for the heat treatment to the internal chamber at a first pressure higher than that of the atmosphere and a protective gas line for supplying a protective gas to the external chamber at a second pressure set in relation to the first pressure; a switch module configured to switch the high-temperature zone and the low-temperature zone into a communication state; and a purge module configured to purge the protective gas in the high-temperature zone to the low-temperature zone in the communication state.
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公开(公告)号：US20250149351A1
公开(公告)日：2025-05-08
申请号：US18832141
申请日：2023-01-10
Applicant: HPSP Co., Ltd.
Inventor： Sung Kil CHO
IPC: H01L21/67
Abstract: The present invention provides a high-pressure wafer processing using a dual high-pressure wafer method processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.
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公开(公告)号：US20230204290A1
公开(公告)日：2023-06-29
申请号：US18145331
申请日：2022-12-22
Applicant: HPSP Co., Ltd.
Inventor： Kun Young LIM
CPC classification number: F27D7/02 , F27D99/007 , F27D7/06 , F27D2001/0059
Abstract: Provided is a high pressure heat treatment apparatus including: an internal chamber accommodating an object to be heat-treated; an external chamber including a housing and a partition plate partitioning the housing into a high-temperature zone accommodating the internal chamber and a low-temperature zone having a lower temperature than the high-temperature zone, the partition plate including a discharge hole for allowing the high-temperature zone and the low-temperature zone to communicate with each other; a gas supply module configured to supply a process gas for the heat treatment to the internal chamber at a first pressure higher than that of the atmosphere, and supply a protective gas to the high-temperature zone and the low-temperature zone at a second pressure set in relation to the first pressure; and a discharge module configured to open the discharge hole to discharge the protective gas in the high-temperature zone to the low-temperature zone.
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公开(公告)号：US20230194174A1
公开(公告)日：2023-06-22
申请号：US18068776
申请日：2022-12-20
Applicant: HPSP Co., Ltd.
Inventor： Kun Young LIM
CPC classification number: F27D7/02 , F27D7/06 , F27D2007/063 , F27D2021/0007
Abstract: Provided is a gas management assembly for a high pressure heat-treatment apparatus, the assembly including: a housing having an inner space; a gas supply module disposed in the inner space and configured to supply a gas to internal and external chambers of the high pressure heat-treatment apparatus; a gas exhaust module disposed in the inner space and configured to exhaust the gas caused by heat treatment of an object from the internal chamber; a detection module connected to the gas exhaust module in the inner space and configured to detect the residual gas remaining in the internal chamber; and a control module configured to control at least one of the gas supply module and the gas exhaust module based on a detection result of the residual gas by the detection module.
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Patent Agency Ranking
公开(公告)号：US20250105003A1
公开(公告)日：2025-03-27
申请号：US18832629
申请日：2023-01-05
Applicant: HPSP Co., Ltd.
Inventor： Sung Kil CHO
IPC: H01L21/02
Abstract: The present invention provides an insulating film manufacturing method of a semiconductor process, the method comprises the steps of: placing a wafer in a processing chamber; by supplying a source gas to the processing chamber at a first pressure higher than an atmospheric pressure, forming an insulating film on the wafer as at least one of an oxidation process and a nitridation process proceeds; by supplying a purge gas to the processing chamber, purging the source gas; and, by supplying atmospheric gas to the processing chamber at a second pressure higher than atmospheric pressure, strengthening the insulation film as the heat treatment process proceeds.
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公开(公告)号：US20250017015A1
公开(公告)日：2025-01-09
申请号：US18892852
申请日：2024-09-23
Applicant: HPSP Co., Ltd.
Inventor： Sungkil CHO
Abstract: The present invention relates to a semiconductor device and a semiconductor device manufacturing method. The semiconductor device manufacturing method according to one embodiment comprises the steps of: forming a thin film structure on a substrate; forming a trench in the thin film structure; forming a blocking layer for covering at least a part of the trench; forming a charge storage layer on the blocking layer; doping the charge storage layer with carbon; forming a tunneling layer on the charge storage layer; and forming a channel layer for covering the tunneling layer and the substrate. According to embodiments, conformality of the charge storage layer can be increased during the manufacture of the semiconductor device.
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公开(公告)号：US20250014928A1
公开(公告)日：2025-01-09
申请号：US18782280
申请日：2024-07-24
Applicant: HPSP Co., Ltd.
Inventor： Sung Kil CHO
IPC: H01L21/677 , H01L21/02 , H01L21/3115 , H01L21/324
Abstract: The present invention provides a high-pressure wafer processing method using a dual high-pressure wafer processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.
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公开(公告)号：US20240096661A1
公开(公告)日：2024-03-21
申请号：US18467838
申请日：2023-09-15
Applicant: HPSP Co., Ltd.
Inventor： Kun Young LIM , Hyeseong YOON
CPC classification number: H01L21/67103 , H01L22/26 , H01L22/34
Abstract: Provided is a gas box assembly for a high pressure processing apparatus, the assembly including: a housing having an inner space; a supply module disposed in the inner space and supplying a process gas to a chamber of the high pressure processing apparatus; an exhaust module exhausting a gas occurring due to processing of an object in the chamber; and a charge module charging a protection gas into the inner space at a pressure higher than an external pressure of the housing to block external air from being introduced into the inner space.
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公开(公告)号：US20250142826A1
公开(公告)日：2025-05-01
申请号：US19006889
申请日：2024-12-31
Inventor： Hyunsang HWANG
Abstract: According to one embodiment of the present invention, a method for manufacturing a three-dimensional NAND flash memory array may include a polygate forming step of alternately stacking gates and gate insulating on a substrate to form a polygate; an opening forming step of forming an opening in the polygate; a polysilicon forming step of depositing silicon and an oxide filler into the opening to form a polysilicon; a metal film forming step of injecting metal into the polysilicon to form a metal film along a sidewall of the polysilicon; a crystal phase transition and growth step of irradiating a first microwave to the opening to grow crystalline silicon between the metal film and the polysilicon; and a crystal phase expansion step of irradiating a second microwave to the opening to expand the crystalline silicon toward a bottom surface of the opening.
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