公开(公告)号：US10998372B1

公开(公告)日：2021-05-04

申请号：US16388044

申请日：2019-04-18

Applicant: HRL LABORATORIES, LLC

Inventor： Geoffrey P. McKnight ,  Andrew C. Keefe ,  Alexander R. Gurga ,  Ryan Freeman

IPC: H01L27/146

Abstract: A method of manufacturing a hybrid focal-plane array includes: forming a read-out integrated circuit with integral bending slit; forming a detector die separately from the read-out integrated circuit and including a detector with integral bending slit; and joining the read-out integrated circuit and the detector die to each other such that the read-out bending slit and the detector bending slit are aligned with each other.

公开(公告)号：US10748957B1

公开(公告)日：2020-08-18

申请号：US16388037

申请日：2019-04-18

Applicant: HRL LABORATORIES, LLC

Inventor： Geoffrey P. McKnight ,  Andrew C. Keefe ,  Alexander R. Gurga ,  Ryan Freeman

IPC: H01L21/027 ,  H01L27/146 ,  G06F30/23 ,  G06F111/10 ,  G06F119/18

Abstract: A method of manufacturing a curved semiconductor die includes: designing a semiconductor die design by conducting finite element analysis of an initial semiconductor die design having a partial spherical curvature, the initial semiconductor die design including a shape of a semiconductor die and a location and shape of a slit in the semiconductor die; when a size of a gap at the slit in the curved semiconductor die is outside a tolerance, modifying the initial semiconductor die design to provide a revised semiconductor die design and conducting another finite element analysis thereof; when the size of the gap at the slit in the curved semiconductor die is within the tolerance, manufacturing a microfabrication mask utilizing the initial semiconductor die design or the revised semiconductor die design having the size of the gap within the tolerance; forming a semiconductor die by utilizing the microfabrication mask; and curving the semiconductor die.

公开(公告)号：US11848349B1

公开(公告)日：2023-12-19

申请号：US16389238

申请日：2019-04-19

Applicant: HRL LABORATORIES, LLC

Inventor： Andrew C. Keefe ,  Geoffrey P. McKnight ,  Alexander R. Gurga ,  Ryan Freeman

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14683 ,  H01L27/14607 ,  H01L27/14806

Abstract: A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.