Low modulation-voltage cryogenic diode structure

    公开(公告)号:US10910793B2

    公开(公告)日:2021-02-02

    申请号:US16659526

    申请日:2019-10-21

    Abstract: A laser or light emitter for operation at a cryogenic temperature includes a single quantum well layer, an n-type barrier layer directly on a first surface of the single quantum well layer, and a p-type barrier layer directly on a second surface of the single quantum well layer opposite the first surface of the single quantum well layer. The single quantum well layer is between the p-type barrier layer and the n-type barrier layer and the compositions of the n-type barrier layer and the p-type barrier layer are graded.

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