公开(公告)号：US11756922B2

公开(公告)日：2023-09-12

申请号：US17525964

申请日：2021-11-15

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Ran He ,  Huifang Jiao ,  Yufeng Dai ,  Guanglin Yang ,  Chihon Ho ,  Ronghua Xie

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H01L2224/0801 ,  H01L2224/08056 ,  H01L2224/08059 ,  H01L2224/08145 ,  H01L2224/80047 ,  H01L2224/80095 ,  H01L2224/80345 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.

公开(公告)号：US20220077105A1

公开(公告)日：2022-03-10

申请号：US17525964

申请日：2021-11-15

Applicant: HUAWEI TECHNOLOGIES CO.,LTD.

Inventor： Ran He ,  Huifang Jiao ,  Yufeng Dai ,  Guanglin Yang ,  Chihon Ho ,  Ronghua Xie

IPC: H01L23/00

Abstract: Embodiments of this application disclose a hybrid bonding structure and a hybrid bonding method. The hybrid bonding structure includes a first chip and a second chip. A surface of the first chip includes a first insulation dielectric and a first metal, and a first gap area exists between the first metal and the first insulation dielectric. A surface of the second chip includes a second insulation dielectric and a second metal. A surface of the first metal is higher than a surface of the first insulation dielectric. Metallic bonding is formed after the first metal is in contact with the second metal, and the first metal is longitudinally and transversely deformed in the first gap area. Insulation dielectric bonding is formed after the first insulation dielectric is in contact with the second insulation dielectric.