公开(公告)号：US20240297245A1

公开(公告)日：2024-09-05

申请号：US18646914

申请日：2024-04-26

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin HU ,  Huantao Duan ,  Ruxue NI ,  Min ZHU

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

Abstract: An integrated circuit, a manufacturing method thereof, a power amplifier, and an electronic device are provided. The integrated circuit includes: a substrate (1), a first nucleation layer (2) located on the substrate (1), a buffer layer (3) located on the first nucleation layer (2), a channel layer (4) located on the buffer layer (3), a barrier layer (5) located on the channel layer (4), and a source (6), a drain (7), and a gate (8) that are separately located on the barrier layer (5). A dislocation density of the buffer layer (3) is less than 1e8 cm−2, so that crystalline quality can be improved, and a higher-quality epitaxial growth material can be obtained, to improve device performance and long-term reliability of the integrated circuit.