公开(公告)号：US20240322029A1

公开(公告)日：2024-09-26

申请号：US18676360

申请日：2024-05-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin Hu ,  Min Zhu ,  Huantao Duan

IPC: H01L29/778 ,  H01L23/66 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H03F3/24

CPC classification number: H01L29/7786 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L2223/6644 ,  H03F3/245

Abstract: A high electron mobility transistor, a radio frequency transistor, and a preparation method for a high electron mobility transistor, and relates to the field of microelectronics technologies, to resolve a technical problem of poor performance of a high electron mobility transistor with a nitrogen surface. The high electron mobility transistor includes a channel layer, a barrier layer, and a substrate layer. A surface that is of the channel layer and that is in contact with the barrier layer has a two-dimensional electron gas layer. The high electron mobility transistor further includes a source and a drain. The source and the drain are located on the channel layer, and the source and the drain are in ohmic contact with the channel layer. The high electron mobility transistor can implement a low ohmic contact resistance and can be better used in a high frequency and power scenario.

公开(公告)号：US20240297245A1

公开(公告)日：2024-09-05

申请号：US18646914

申请日：2024-04-26

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin HU ,  Huantao Duan ,  Ruxue NI ,  Min ZHU

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

Abstract: An integrated circuit, a manufacturing method thereof, a power amplifier, and an electronic device are provided. The integrated circuit includes: a substrate (1), a first nucleation layer (2) located on the substrate (1), a buffer layer (3) located on the first nucleation layer (2), a channel layer (4) located on the buffer layer (3), a barrier layer (5) located on the channel layer (4), and a source (6), a drain (7), and a gate (8) that are separately located on the barrier layer (5). A dislocation density of the buffer layer (3) is less than 1e8 cm−2, so that crystalline quality can be improved, and a higher-quality epitaxial growth material can be obtained, to improve device performance and long-term reliability of the integrated circuit.

公开(公告)号：US20230268243A1

公开(公告)日：2023-08-24

申请号：US18310071

申请日：2023-05-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin Hu ,  Huantao Duan

IPC: H01L23/373 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L23/3732 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a substrate, and an epitaxial layer and an electrode that are located on the substrate. The substrate has a diamond structure that longitudinally penetrates the substrate. The diamond structure may be longitudinally divided into a first diamond part and a second diamond part below the first diamond part. The first diamond part and the second diamond part have different lateral dimensions.