公开(公告)号：US20250037749A1

公开(公告)日：2025-01-30

申请号：US18919810

申请日：2024-10-18

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Shihui YIN ,  Weiliang JING ,  Bingwu JI ,  Sitong BU ,  Zhengbo WANG ,  Heng LIAO

IPC: G11C11/22

Abstract: This disclosure relates to a bit line reading circuit, a memory, and an electronic device. An example bit line reading circuit includes a bit line connected to a ferroelectric memory cell. The bit line reading circuit further includes a reference line, a sense amplifier, and a precharge circuit. The sense amplifier and the precharge circuit are separately connected to the bit line and the reference line. The bit line reading circuit further includes a first switch connected to the bit line between the sense amplifier and the precharge circuit, and a second switch connected to the reference line between the sense amplifier and the precharge circuit.