公开(公告)号：US20230188104A1

公开(公告)日：2023-06-15

申请号：US18169516

申请日：2023-02-15

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Wei XU ,  Po SHI ,  Zhengde YANG ,  Yufeng WANG ,  Junhao ZOU ,  Qingquan LUO ,  Shengchang SHANGGUAN

IPC: H03F3/24

CPC classification number: H03F3/245 ,  H03F2200/451 ,  H03F2200/102 ,  H03F2200/231

Abstract: Example power amplifier chips and communication devices are described. One example power amplifier chip includes a package housing and a plurality of power amplifier dies. The plurality of power amplifier dies are packaged in the package housing, and each of the plurality of power amplifier dies includes at least one stage of power amplifier.

公开(公告)号：US20210217900A1

公开(公告)日：2021-07-15

申请号：US17215716

申请日：2021-03-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Yufeng WANG ,  Yuantao ZHOU ,  Wei WAN ,  Jiang QIN

IPC: H01L29/868 ,  H01L29/06 ,  H03H11/16 ,  H01Q3/36

Abstract: This application provides a semiconductor switch device and a preparation method thereof, and a solid-state phase shifter. The semiconductor switch device includes a second semiconductor layer, a first intrinsic layer, a first semiconductor layer, a second intrinsic layer, and a third semiconductor layer that are stacked in a sandwich structure. The first intrinsic layer is located between the second semiconductor layer and the first semiconductor layer, and the first intrinsic layer, the second semiconductor layer, and the first semiconductor layer form a first PIN diode. The second intrinsic layer is located between the third semiconductor layer and the first semiconductor layer, and the second intrinsic layer, the third semiconductor layer, and the first semiconductor layer form a second PIN diode. The first PIN diode and the second PIN diode are axisymmetrically disposed.