公开(公告)号：US20250113505A1

公开(公告)日：2025-04-03

申请号：US18285857

申请日：2023-05-06

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Binhao WANG ,  Shaojie LONG ,  Xiangshui MIAO

IPC: H10B41/27 ,  H10B41/30 ,  H10B41/40

Abstract: The invention discloses a three-dimensional 1S1C memory based on a ring capacitor and a preparation method. The memory includes: a horizontal peripheral electrode layer including a first dielectric layer and a first metal electrode layer alternately stacked and grown on a substrate and provided with trenches penetrating in a vertical direction and holes penetrating in the vertical direction, a vertical functional layer, and a capacitive dielectric layer. An annular groove is disposed outside each hole. The annular groove surrounds the holes and vertically cuts off the peripheral electrode layer. The annular groove is evenly filled with a capacitive dielectric layer. A top of the second metal electrode layer is extended to a surface of a topmost first dielectric layer to form a bit line electrode and is connected to a bit line. A region where the second metal electrode layer faces the first metal electrode layer forms a memory cell.