公开(公告)号：US20220271089A1

公开(公告)日：2022-08-25

申请号：US17043672

申请日：2019-09-23

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao TONG ,  Wang CAI ,  Xiangshui MIAO

IPC: H01L27/24 ,  H01L45/00

Abstract: The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers. By improving the overall process of the preparation method, the disclosure realizes the establishment of a three-dimensional phase change memory array by using a vertical electrode structure.

公开(公告)号：US20210280784A1

公开(公告)日：2021-09-09

申请号：US16626520

申请日：2018-11-29

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Hao TONG ,  Yushan SHEN ,  Wang CAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.