公开(公告)号：US20210104670A1

公开(公告)日：2021-04-08

申请号：US17040998

申请日：2018-08-09

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Hao TONG ,  Yushan SHEN

IPC: H01L45/00 ,  H01L27/24

Abstract: The disclosure discloses a three-dimensional stacked memory and a preparation method thereof. The storage unit adopts a constrained structure phase change storage unit, and uses a crossbar storage array structure to build a large-capacity storage array. The preparation method includes: preparing N first strip-shaped electrodes along a crystal direction on a substrate; preparing a first insulating layer with M*N array of through holes; filling the M*N array of through holes of the first insulating layer with a phase change material to form first phase change units; preparing M second strip-shaped electrodes; preparing a second insulating layer, using spin-coated photoresist as a sacrificial material, performing a local planarization on the surface of the second insulating layer; forming M*N array of through holes on the second insulating layer; filling a phase change material to form second phase change units; preparing N third strip-shaped electrodes to form a two-layer stacked phase change memory.

公开(公告)号：US20210280784A1

公开(公告)日：2021-09-09

申请号：US16626520

申请日：2018-11-29

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xiangshui MIAO ,  Hao TONG ,  Yushan SHEN ,  Wang CAI

IPC: H01L45/00 ,  H01L27/24

Abstract: A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.