公开(公告)号：US20240389461A1

公开(公告)日：2024-11-21

申请号：US18661690

申请日：2024-05-12

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xingsheng Wang ,  Zichong Zhang ,  Xiangshui MIAO

IPC: H10N30/045 ,  H01L29/51

Abstract: The disclosure discloses a thermal reawakening operation method and system for enhancing polarization of a hafnium-based ferroelectric film, belonging to the field of micro-nanoelectronic technology, which includes the following. S1. Heating is performed on the hafnium-based ferroelectric thin film. S2. A pulse voltage having multiple cycles is applied to the hafnium-based ferroelectric thin film. S3.The hafnium-based ferroelectric thin film is cooled to an initial temperature. In the disclosure, through the thermal reawakening operation, a certain amount of oxygen vacancies are generated, and the non-polarized phase is transformed into the polarized phase, the polarization value of the hafnium-based ferroelectric film can be significantly improved at a low cost and with a simple operation, thereby the performance of the hafnium-based ferroelectric device is significantly improved.