公开(公告)号：US20230187403A1

公开(公告)日：2023-06-15

申请号：US17703057

申请日：2022-03-24

申请人： HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

发明人： Kyoung-Kook Hong ,  Su-Bin Kang ,  Young-Seok Kim

IPC分类号： H01L23/00 ,  H01L23/373

CPC分类号： H01L24/27 ,  H01L23/3735 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2711 ,  H01L2224/3303 ,  H01L2224/8384 ,  H01L2224/27438 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83447 ,  H01L2924/10272

摘要： The present disclosure provides a method for manufacturing a double-sided cooling type power module including separately patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the semiconductor chip, positioning the bonding material of the semiconductor chip on an upper electrode layer formed on an upper substrate to be in contact with the upper electrode layer, and sintering an upper bonding layer by pressurizing and heating the semiconductor chip. According to the present disclosure, it is possible to separately dispose the bonding material on each of gate and source electrode parts on an upper portion of the chip even without protrusion to directly bond the chip and the substrate.