公开(公告)号：US20110039413A1

公开(公告)日：2011-02-17

申请号：US12539930

申请日：2009-08-12

申请人： Hakeem Akinmade-Yusuff ,  Samuel S. Choi

发明人： Hakeem Akinmade-Yusuff ,  Samuel S. Choi

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0335 ,  H01L21/3085 ,  H01L21/31138

摘要： A lithographic material stack including a photo-resist and an organic planarizing layer is combined with an etch process that generates etch residues over a wide region from sidewalls of etched regions. By selecting the etch chemistry that produces deposition of etch residues from the organic planarizing layer over a wide region, the etch residue generated at the sidewalls of the wide trench is deposited over the entire bottom surface of the wide trench. An etch residue portion remains at the bottom surface of the wide trench when the organic planarizing layer is etched through in the first trench region. The etch residue portion is employed in the next step of the etch process to retard the etch rate in the wide trench, thereby producing the same depth for all trenches in the material layer into which the pattern of the lithographic material stack is transferred.

摘要翻译： 包括光致抗蚀剂和有机平坦化层的平版印刷材料堆叠与在蚀刻区域的侧壁的宽区域上产生蚀刻残留物的蚀刻工艺组合。 通过选择在宽范围内产生来自有机平坦化层的蚀刻残留物沉积的蚀刻化学品，在宽沟槽的侧壁处产生的蚀刻残留物沉积在宽沟槽的整个底表面上。 当在第一沟槽区域中蚀刻有机平坦化层时，蚀刻残留部分保留在宽沟槽的底表面处。 蚀刻残留部分用于蚀刻工艺的下一步骤以延迟宽沟槽中的蚀刻速率，从而为材料层中所有的平版印刷材料堆叠的图案被转移到其中的所有沟槽产生相同的深度。

公开(公告)号：US20120205786A1

公开(公告)日：2012-08-16

申请号：US13455505

申请日：2012-04-25

申请人： Hakeem Akinmade-Yusuff ,  John A. Fitzsimmons ,  Ranee Wai-Ling Kwong

发明人： Hakeem Akinmade-Yusuff ,  John A. Fitzsimmons ,  Ranee Wai-Ling Kwong

IPC分类号： H01L23/28

CPC分类号： H01L21/31138 ,  G03F7/091 ,  G03F7/422 ,  H01L21/0276 ,  H01L21/31144

摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.

摘要翻译： 一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。 该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案， 并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。 该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。

公开(公告)号：US08835307B2

公开(公告)日：2014-09-16

申请号：US13468232

申请日：2012-05-10

申请人： Hakeem Akinmade-Yusuff ,  John A. Fitzsimmons ,  Ranee Wai-Ling Kwong

发明人： Hakeem Akinmade-Yusuff ,  John A. Fitzsimmons ,  Ranee Wai-Ling Kwong

IPC分类号： H01L33/44 ,  H01L21/311 ,  H01L21/027 ,  G03F7/42 ,  G03F7/09 ,  H01L51/00

CPC分类号： H01L21/31138 ,  G03F7/091 ,  G03F7/422 ,  H01L21/0276 ,  H01L21/31144

摘要： A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.

摘要翻译： 一种用于在半导体衬底上再加工抗反射涂层（ARC）层的方法和结构。 该方法包括提供具有材料层的基板，在材料层上形成平坦化层，在平坦化层上形成有机溶剂可溶层，在有机溶剂可溶层上形成ARC层，在ARC层中形成图案， 并且用有机溶剂除去有机溶剂可溶层和ARC层，同时留下平坦化层不被除去。 该结构包括具有材料层的基板，材料层上的平坦化层，平坦化层上的有机溶剂可溶层和有机溶剂可溶层上的ARC层。