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公开(公告)号:US5554889A
公开(公告)日:1996-09-10
申请号:US430105
申请日:1995-04-27
申请人: Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
发明人: Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
IPC分类号: H01L23/532 , A01L23/48 , A01L23/52 , A01L29/40
CPC分类号: H01L23/53219 , H01L2924/0002
摘要: A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要翻译: 提供了一种用于包括铝,铜和钨的半导体器件的金属化合金。 在施加金属化的方法中,将金属溅射到其上形成有器件的半导体衬底上。 沉积后,使用常规的半导体光致抗蚀剂和蚀刻技术对金属化进行构图和蚀刻。