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公开(公告)号:US5554889A
公开(公告)日:1996-09-10
申请号:US430105
申请日:1995-04-27
申请人: Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
发明人: Hank H. Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
IPC分类号: H01L23/532 , A01L23/48 , A01L23/52 , A01L29/40
CPC分类号: H01L23/53219 , H01L2924/0002
摘要: A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要翻译: 提供了一种用于包括铝,铜和钨的半导体器件的金属化合金。 在施加金属化的方法中,将金属溅射到其上形成有器件的半导体衬底上。 沉积后,使用常规的半导体光致抗蚀剂和蚀刻技术对金属化进行构图和蚀刻。
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公开(公告)号:US5700721A
公开(公告)日:1997-12-23
申请号:US658041
申请日:1996-06-04
申请人: Hank Hukyoo Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
发明人: Hank Hukyoo Shin , Clarence J. Tracy , Robert L. Duffin , John L. Freeman, Jr. , Gordon Grivna , Syd R. Wilson
IPC分类号: H01L23/532 , H01L21/443
CPC分类号: H01L23/53219 , H01L2924/0002
摘要: A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
摘要翻译: 提供了一种用于包括铝,铜和钨的半导体器件的金属化合金。 在施加金属化的方法中,将金属溅射到其上形成有器件的半导体衬底上。 沉积后,使用常规的半导体光致抗蚀剂和蚀刻技术对金属化进行构图和蚀刻。
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公开(公告)号:US4970176A
公开(公告)日:1990-11-13
申请号:US414355
申请日:1989-09-29
IPC分类号: H01L21/768
CPC分类号: H01L21/76882 , Y10S148/025
摘要: Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.
摘要翻译: 通过利用多步金属化工艺改进了金属台阶覆盖。 在第一步骤中,在半导体晶片上,在较冷的温度下沉积厚的金属层。 随着温度升高,金属剩余量沉积在第二步中,以允许通过晶粒生长,重结晶和体扩散来回流金属层。 在冷温度下沉积的金属层的厚部分具有足够的厚度,使得其在更高的温度下保持连续并且通过填充增强。
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公开(公告)号:US5049811A
公开(公告)日:1991-09-17
申请号:US546635
申请日:1990-07-02
申请人: Michael Dreyer , Robert L. Duffin
发明人: Michael Dreyer , Robert L. Duffin
IPC分类号: G01R31/28
CPC分类号: G01R31/2831
摘要: A fast, nondestructive, and low cost method for measuring the integrity of semiconductor multi-layer conducting structures uses a voltage spectral density technique. The method compares the magnitude and frequency of generally non-periodic low frequency voltages induced by direct current flow in test structures to the same parameters of a defect free structure.
摘要翻译: 用于测量半导体多层导电结构的完整性的快速,非破坏性和低成本的方法使用电压谱密度技术。 该方法将在测试结构中的直流电流引起的一般非周期低频电压的幅度和频率与无缺陷结构的相同参数进行比较。
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