摘要:
A pixel structure of a liquid crystal display panel includes a first substrate; a color filter layer formed on the first substrate, the color filter layer comprising a plurality of filtering areas for filtering light, and a plurality of blocking areas for blocking light; a main spacer formed on one of the blocking areas; a sub spacer formed on another one of the blocking areas; a second substrate; a thin film transistor formed on the second substrate; an insulating layer formed above the thin film transistor and the second substrate; a liquid crystal layer formed between the first substrate and the second substrate; wherein a distance from an upper surface of the insulating layer near the main spacer to the second substrate is greater than a distance from an upper surface of the insulating layer near the sub spacer to the second substrate.
摘要:
A pixel array substrate includes a substrate, a plurality of thin-film transistors disposed on the substrate, a first insulating layer covering the thin-film transistors and the substrate, a common electrode disposed on the first insulating layer, a second insulating layer covering the first insulating layer and the common electrode, and a plurality of pixel electrodes disposed on the second insulating layer. Each thin-film transistor includes a drain electrode. The first insulating layer includes a plurality of first openings exposing the drain electrodes respectively. The second insulating layer includes a plurality of second openings exposing the first openings respectively. Each pixel electrode is electrically connected to each drain electrode respectively through each first opening and each second opening. The first insulating layer includes a thickness between 1 micron and 5 microns.
摘要:
A pixel structure of a liquid crystal display panel includes a first substrate; a color filter layer formed on the first substrate, the color filter layer comprising a plurality of filtering areas for filtering light, and a plurality of blocking areas for blocking light; a main spacer formed on one of the blocking areas; a sub spacer formed on another one of the blocking areas; a second substrate; a thin film transistor formed on the second substrate; an insulating layer formed above the thin film transistor and the second substrate; a liquid crystal layer formed between the first substrate and the second substrate; wherein a distance from an upper surface of the insulating layer near the main spacer to the second substrate is greater than a distance from an upper surface of the insulating layer near the sub spacer to the second substrate.
摘要:
The present invention discloses a thin film transistor array substrate comprising a plurality of thin film transistors, with each one thereof including a gate electrode, a gate insulation layer, an amorphous-oxide semiconductor layer and a pair of a source electrode and a drain electrode. The amorphous-oxide semiconductor layer comprises an amorphous-oxide semiconductor material having a-IGZO. The thin film transistor array substrate further comprises a first insulation layer and a second insulation layer disposed on the thin film transistors. Since the a-IGZO semiconductor layer and the thick insulation layer covered thereon are used in the present invention, a common electrode can overlap the scan lines or data lines to increase the aperture ratio of the pixel structure. Furthermore, the thick insulation layer can be fabricated through a coating process, so as to keep the a-IGZO semiconductor layer from damages during the fabrication processes.