公开(公告)号：US20090194770A1

公开(公告)日：2009-08-06

申请号：US12336093

申请日：2008-12-16

Applicant: Hanson LIU ,  Ryan LEE

Inventor： Hanson LIU ,  Ryan LEE

IPC: H01L33/00 ,  H01L21/20

CPC classification number: H01L21/02595 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1229 ,  H01L27/1237 ,  H01L29/4908 ,  H01L29/78621

Abstract: A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the second amorphous silicon layer absorbs more laser light than the first amorphous silicon layer does. The first amorphous silicon layer crystallizes into a microcrystalline silicon layer and the second amorphous silicon layer crystallizes into a polysilicon layer. During the laser annealing process, light interference between the first amorphous silicon layer and an underlying buffer layer is eliminated owing to that the second amorphous silicon layer absorbs more laser light. The laser fringe is eliminated. The microcrystalline silicon layer with better crystalline uniformity can serve as an active layer for TFTs in the display area of an OLED display to improve its illumination uniformity.

Abstract translation: 在衬底上形成第一非晶硅层，在第一非晶硅层上形成第二非晶硅层。 当进行激光退火处理时，第二非晶硅层比第一非晶硅层吸收更多的激光。 第一非晶硅层结晶成微晶硅层，第二非晶硅层结晶成多晶硅层。 在激光退火过程中，由于第二非晶硅层吸收更多的激光，因此消除了第一非晶硅层和下面的缓冲层之间的光干涉。 消除了激光边缘。 具有更好的晶体均匀性的微晶硅层可以用作OLED显示器的显示区域中的TFT的有源层，以提高其照明均匀性。