Brachytherapy dose verification apparatus, system and method

    公开(公告)号:US09636523B2

    公开(公告)日:2017-05-02

    申请号:US13822278

    申请日:2010-09-13

    Abstract: A system, method and device for brachytherapy treatment verification is described herein. The verification may be in real time and may provide verification of one or more of dose, source position, dwell time and source activity. In one embodiment the invention provides a method for verifying a brachytherapy radiation treatment including processing a distribution of exposure to a brachytherapy radiation source of a two dimensional imaging array to determine a region of high exposure; obtaining one or more distribution of exposure profiles through the region of high exposure; determining a region of high value in the one or more distribution of exposure profiles; and using the determined region of high exposure and/or high value to calculate one or more brachytherapy radiation source position and/or one or more brachytherapy radiation source distance to thereby verify at least a part of the brachytherapy radiation treatment.

    Vending Accommodation and Accessibility
    2.
    发明申请
    Vending Accommodation and Accessibility 有权
    自动售货机和无障碍设施

    公开(公告)号:US20140100691A1

    公开(公告)日:2014-04-10

    申请号:US13647203

    申请日:2012-10-08

    Applicant: Ryan Lee West

    Inventor: Ryan Lee West

    Abstract: Vending accommodation and accessibility is described in connection with completing transactions by a machine. In certain aspects, the method includes entering an accommodation mode based on a user selection, displaying an accommodation menu comprising at least one selection button and a list of items available for vending, and announcing a selected item of the list of items available for vending. In other aspects, the method includes determining whether an item has been selected for vending based on touching at least one selection button according to instructions to a relative position of the selection button on a display screen. When determining that an item has been selected for vending, the method further includes prompting for payment to complete a transaction for the item.

    Abstract translation: 自动售货机和无障碍设施的描述与机器完成交易有关。 在某些方面,该方法包括基于用户选择进入调节模式,显示包括至少一个选择按钮和可用于售货的项目列表的膳宿菜单,以及宣布可用于出售的物品列表的选定项目。 在其他方面,该方法包括基于根据对显示屏幕上的选择按钮的相对位置的指令,基于触摸至少一个选择按钮来确定是否已经选择了用于自动售货的物品。 当确定已经为自动售货机选择了一个物品时,该方法还包括提示付款以完成物品的交易。

    SYSTEM AND METHOD FOR PROVIDING A CASHLESS VENDING DONATION TRANSATION
    3.
    发明申请
    SYSTEM AND METHOD FOR PROVIDING A CASHLESS VENDING DONATION TRANSATION 有权
    用于提供无连续递送捐赠转移的系统和方法

    公开(公告)号:US20130290146A1

    公开(公告)日:2013-10-31

    申请号:US13456055

    申请日:2012-04-25

    CPC classification number: G06Q30/02 G06Q20/18 G07F9/00

    Abstract: The present invention relates to a system and method of utilizing a vending machine to make a charitable donation. A vending machine offering product/service for sale and a donation transaction for selection by the user. Payment of the donation amount is received at the vending machine and transmitted to the charitable organization.

    Abstract translation: 本发明涉及利用自动贩卖机进行慈善捐赠的系统和方法。 提供销售产品/服务的自动售货机和用户选择的捐赠交易。 在自动售货机收到捐款金额,并转交慈善组织。

    Ambient Signal Identification
    4.
    发明申请
    Ambient Signal Identification 有权
    环境信号识别

    公开(公告)号:US20130158935A1

    公开(公告)日:2013-06-20

    申请号:US13325753

    申请日:2011-12-14

    Inventor: Ryan Lee Carlson

    CPC classification number: H04B17/21 H04B17/345

    Abstract: A method and apparatus for identifying ambient signal data in a test signal data set. A cumulative amplitude distribution of data elements is identified in the test signal data set in order by amplitude values. The data elements comprise frequency values and corresponding amplitude values. A subset of data elements from the test signal data set is identified. The subset of data elements comprises the data elements with the amplitude values greater than a first threshold value. The data elements in the subset of data elements are identified wherein a difference between the amplitude values of adjacent data elements in the cumulative amplitude distribution of data elements is greater than a second threshold value.

    Abstract translation: 一种用于识别测试信号数据集中的环境信号数据的方法和装置。 数据元素的累积幅度分布在测试信号数据集中以振幅值顺序被识别。 数据元素包括频率值和对应的振幅值。 识别来自测试信号数据集的数据元素的子集。 数据元素的子集包括幅度值大于第一阈值的数据元素。 识别数据元素子集中的数据元素,其中数据元素的累积幅度分布中的相邻数据元素的振幅值之间的差异大于第二阈值。

    Fractional-N based digital AFC system with a translational PLL transmitter
    7.
    发明授权
    Fractional-N based digital AFC system with a translational PLL transmitter 有权
    基于分数N的数字AFC系统具有平移PLL发射机

    公开(公告)号:US07626462B1

    公开(公告)日:2009-12-01

    申请号:US11415578

    申请日:2006-05-02

    CPC classification number: H03L7/23 H03J1/005 H03J7/065 H03L7/1974

    Abstract: A fractional-N based Automatic Frequency Control (AFC) system for a mobile terminal is provided. In general, automatic frequency control is implemented in a frequency synthesizer to correct or compensate for a frequency error of an associated reference oscillator. The frequency synthesizer includes a first fractional-N phase-locked loop (FN-PLL) generating a baseband clock signal used by a baseband processor of the mobile terminal, a second FN-PLL generating a receiver local oscillator signal used by a receiver of the mobile terminal to downconvert a received radio frequency signal to a desired frequency, and a translational PLL generating a transmitter local oscillator signal used by a transmitter of the mobile terminal to provide a radio frequency transmit signal. The automatic frequency control is performed by applying a digital correction value, which is preferably multiplicative, to fractional-N dividers of the first and second FN-PLLs.

    Abstract translation: 提供了一种用于移动终端的基于分数N的自动频率控制(AFC)系统。 通常,在频率合成器中实现自动频率控制以校正或补偿相关参考振荡器的频率误差。 频率合成器包括产生由移动终端的基带处理器使用的基带时钟信号的第一小数N锁相环(FN-PLL),第二FN-PLL产生由接收机使用的接收机本地振荡器信号 移动终端将所接收的射频信号下变频到期望的频率,以及平移PLL,其生成由移动终端的发射机使用以提供射频发射信号的发射机本地振荡器信号。 通过将优选乘法的数字校正值应用于第一和第二FN-PLL的分数N分频器来执行自动频率控制。

    Multi-gate thin film transistor having recrystallized channel regions with different grain sizes
    8.
    发明授权
    Multi-gate thin film transistor having recrystallized channel regions with different grain sizes 有权
    具有不同晶粒尺寸的再结晶沟道区的多栅极薄膜晶体管

    公开(公告)号:US07612379B2

    公开(公告)日:2009-11-03

    申请号:US11938117

    申请日:2007-11-09

    Abstract: An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.

    Abstract translation: 图像显示系统具有设置在透明基板上的多栅极薄膜晶体管(TFT)。 多栅极TFT包括硅膜层,第一电极和反射层。 硅膜层形成在透明基板上,具有彼此不相邻的第一结晶区和第二结晶区。 第一结晶区的晶粒尺寸小于第二结晶区的晶粒尺寸。 对应于第一结晶区的第一电极设置在硅膜层上。 对应于第二结晶区的反射层设置在透明基板上。 硅膜层设置在透明基板和反射层上。

    Display with thin film transistor devices having different electrical characteristics in pixel and driving regions
    9.
    发明授权
    Display with thin film transistor devices having different electrical characteristics in pixel and driving regions 有权
    在像素和驱动区域中显示具有不同电特性的薄膜晶体管器件

    公开(公告)号:US07592628B2

    公开(公告)日:2009-09-22

    申请号:US11490551

    申请日:2006-07-21

    CPC classification number: H01L27/1214 H01L27/1237 H01L27/127

    Abstract: A system for displaying images comprises a thin film transistor (TFT) device comprising first and second active layers disposed on a substrate in the driving circuit region and in the pixel region, respectively. Each active layer comprises a channel region, a source/drain region and a lightly doped region formed therebetween. Two gate structures are disposed on the first and second active layers, respectively. Each gate structure comprises a stacked first and second gate dielectric layers and a gate layer, and the second gate dielectric layer has a length shorter than that of the first gate dielectric layer but longer than the gate length of the gate layer. The lightly doped region of the first active layer has a length different from that of the second active layer.

    Abstract translation: 用于显示图像的系统包括薄膜晶体管(TFT)器件,其包括分别设置在驱动电路区域和像素区域中的衬底上的第一和第二有源层。 每个有源层包括沟道区,源极/漏极区和在它们之间形成的轻掺杂区。 两个栅极结构分别设置在第一和第二有源层上。 每个栅极结构包括堆叠的第一和第二栅极电介质层和栅极层,并且第二栅极介电层的长度比第一栅极介电层的长度短,但是长于栅极层的栅极长度。 第一有源层的轻掺杂区域的长度不同于第二有源层的长度。

    Organic electroluminescent device and fabrication method thereof
    10.
    发明申请
    Organic electroluminescent device and fabrication method thereof 有权
    有机电致发光器件及其制造方法

    公开(公告)号:US20090206737A1

    公开(公告)日:2009-08-20

    申请号:US12322039

    申请日:2009-01-27

    Abstract: The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.

    Abstract translation: 本发明公开了一种包括基板的有机电致发光器件。 衬底包括第一控制区域和第二控制区域,设置在第一控制区域上的多晶硅有源层以及设置在多晶硅有源层中的第一导电类型源极/漏极区域。 第一电介质层设置在用作第一栅介质层的多晶硅有源层上,第一栅极和第二栅极分别设置在多晶硅有源层和第二控制区上,其中第一栅极和第一导电类型 源极/漏极区域构成用作开关元件的第一导电型薄膜晶体管。 设置在第一栅极和第二栅极上的第二电介质层用作第二栅极电介质层,设置在第二栅极上的微晶硅有源层。

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